Picosecond time-resolved luminescence studies of recombination processes in CdTe

G. Ghislotti, D. Ielmini, Elisa Riedo, M. Martinelli, M. Dellagiovanna

Research output: Contribution to journalArticle

Abstract

High resistivity CdTe:In samples were studied by means of continuous and picosecond time-resolved photoluminescence (PL). The detected PL signal is affected by non-radiative trapping, while radiative recombination has an excitonic character. Two recombination lifetimes describe the measured time-resolved PL spectra: the first (30-60 ps) takes into account fast non-radiative recombination; the second lifetime is in the range 200-300 ps and can be related to exciton decay .

Original languageEnglish (US)
Pages (from-to)211-216
Number of pages6
JournalSolid State Communications
Volume111
Issue number4
DOIs
StatePublished - Jun 18 1999

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Luminescence
Photoluminescence
luminescence
photoluminescence
life (durability)
radiative recombination
Excitons
trapping
excitons
electrical resistivity
decay
LDS 751

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Picosecond time-resolved luminescence studies of recombination processes in CdTe. / Ghislotti, G.; Ielmini, D.; Riedo, Elisa; Martinelli, M.; Dellagiovanna, M.

In: Solid State Communications, Vol. 111, No. 4, 18.06.1999, p. 211-216.

Research output: Contribution to journalArticle

Ghislotti, G. ; Ielmini, D. ; Riedo, Elisa ; Martinelli, M. ; Dellagiovanna, M. / Picosecond time-resolved luminescence studies of recombination processes in CdTe. In: Solid State Communications. 1999 ; Vol. 111, No. 4. pp. 211-216.
@article{8c469a7c62484e22b0318c9624610146,
title = "Picosecond time-resolved luminescence studies of recombination processes in CdTe",
abstract = "High resistivity CdTe:In samples were studied by means of continuous and picosecond time-resolved photoluminescence (PL). The detected PL signal is affected by non-radiative trapping, while radiative recombination has an excitonic character. Two recombination lifetimes describe the measured time-resolved PL spectra: the first (30-60 ps) takes into account fast non-radiative recombination; the second lifetime is in the range 200-300 ps and can be related to exciton decay .",
author = "G. Ghislotti and D. Ielmini and Elisa Riedo and M. Martinelli and M. Dellagiovanna",
year = "1999",
month = "6",
day = "18",
doi = "10.1016/S0038-1098(99)00184-2",
language = "English (US)",
volume = "111",
pages = "211--216",
journal = "Solid State Communications",
issn = "0038-1098",
publisher = "Elsevier Limited",
number = "4",

}

TY - JOUR

T1 - Picosecond time-resolved luminescence studies of recombination processes in CdTe

AU - Ghislotti, G.

AU - Ielmini, D.

AU - Riedo, Elisa

AU - Martinelli, M.

AU - Dellagiovanna, M.

PY - 1999/6/18

Y1 - 1999/6/18

N2 - High resistivity CdTe:In samples were studied by means of continuous and picosecond time-resolved photoluminescence (PL). The detected PL signal is affected by non-radiative trapping, while radiative recombination has an excitonic character. Two recombination lifetimes describe the measured time-resolved PL spectra: the first (30-60 ps) takes into account fast non-radiative recombination; the second lifetime is in the range 200-300 ps and can be related to exciton decay .

AB - High resistivity CdTe:In samples were studied by means of continuous and picosecond time-resolved photoluminescence (PL). The detected PL signal is affected by non-radiative trapping, while radiative recombination has an excitonic character. Two recombination lifetimes describe the measured time-resolved PL spectra: the first (30-60 ps) takes into account fast non-radiative recombination; the second lifetime is in the range 200-300 ps and can be related to exciton decay .

UR - http://www.scopus.com/inward/record.url?scp=0032677316&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032677316&partnerID=8YFLogxK

U2 - 10.1016/S0038-1098(99)00184-2

DO - 10.1016/S0038-1098(99)00184-2

M3 - Article

AN - SCOPUS:0032677316

VL - 111

SP - 211

EP - 216

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

IS - 4

ER -