Physical and electrical characterizations of metal-oxide-semiconductor capacitors fabricated on GaAs substrates with different surface chemical treatments and Al2O3 gate dielectric

Domingo I. Garcia-Gutierrez, Davood Shahrjerdi, Vidya Kaushik, Sanjay K. Banerjee

Research output: Contribution to journalArticle

Abstract

The authors present experimental evidence on the impact of three different chemical surface treatments on the interface between the GaAs substrate and the aluminum oxide dielectric layer used in the fabrication of metal-oxide- semiconductor capacitors. The three different chemical surface treatments studied prior to atomic layer deposition (ALD) of the dielectric layer include (a) GaAs native oxide removal in a dilute HF solution only, (b) HF etch followed by a NH4OH treatment, and (c) HF etch followed by a (NH 4)2 S treatment. Moreover, interfacial self-cleaning of nontreated GaAs wafers upon ALD of aluminum oxide using trimethyl aluminum precursor was examined. Transmission electron microscopy, electron energy loss spectroscopy (EELS) and capacitance-voltage (C-V) data showed slight differences among the nontreated, HF-only, and NH4OH treated samples. However the (NH4)2S treated sample showed improved capacitance-voltage characteristics as well as an improved aluminum oxide/GaAs interface compared to the other three samples. Additionally, the characteristic oxygen K EELS peak suggests the presence of a thin additional layer close to the center of the high- κ layer containing oxygen, tantalum, and aluminum, as a consequence of probable plasma damage to the high- κ layer during the TaN metal gate deposition.

Original languageEnglish (US)
Pages (from-to)2390-2395
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume27
Issue number6
DOIs
StatePublished - 2009

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Gate dielectrics
metal oxide semiconductors
capacitors
Capacitors
Aluminum
Substrates
Metals
Oxides
Atomic layer deposition
aluminum oxides
Electron energy loss spectroscopy
atomic layer epitaxy
surface treatment
Surface treatment
Capacitance
energy dissipation
electron energy
aluminum
Oxygen
capacitance-voltage characteristics

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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title = "Physical and electrical characterizations of metal-oxide-semiconductor capacitors fabricated on GaAs substrates with different surface chemical treatments and Al2O3 gate dielectric",
abstract = "The authors present experimental evidence on the impact of three different chemical surface treatments on the interface between the GaAs substrate and the aluminum oxide dielectric layer used in the fabrication of metal-oxide- semiconductor capacitors. The three different chemical surface treatments studied prior to atomic layer deposition (ALD) of the dielectric layer include (a) GaAs native oxide removal in a dilute HF solution only, (b) HF etch followed by a NH4OH treatment, and (c) HF etch followed by a (NH 4)2 S treatment. Moreover, interfacial self-cleaning of nontreated GaAs wafers upon ALD of aluminum oxide using trimethyl aluminum precursor was examined. Transmission electron microscopy, electron energy loss spectroscopy (EELS) and capacitance-voltage (C-V) data showed slight differences among the nontreated, HF-only, and NH4OH treated samples. However the (NH4)2S treated sample showed improved capacitance-voltage characteristics as well as an improved aluminum oxide/GaAs interface compared to the other three samples. Additionally, the characteristic oxygen K EELS peak suggests the presence of a thin additional layer close to the center of the high- κ layer containing oxygen, tantalum, and aluminum, as a consequence of probable plasma damage to the high- κ layer during the TaN metal gate deposition.",
author = "Garcia-Gutierrez, {Domingo I.} and Davood Shahrjerdi and Vidya Kaushik and Banerjee, {Sanjay K.}",
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T1 - Physical and electrical characterizations of metal-oxide-semiconductor capacitors fabricated on GaAs substrates with different surface chemical treatments and Al2O3 gate dielectric

AU - Garcia-Gutierrez, Domingo I.

AU - Shahrjerdi, Davood

AU - Kaushik, Vidya

AU - Banerjee, Sanjay K.

PY - 2009

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AB - The authors present experimental evidence on the impact of three different chemical surface treatments on the interface between the GaAs substrate and the aluminum oxide dielectric layer used in the fabrication of metal-oxide- semiconductor capacitors. The three different chemical surface treatments studied prior to atomic layer deposition (ALD) of the dielectric layer include (a) GaAs native oxide removal in a dilute HF solution only, (b) HF etch followed by a NH4OH treatment, and (c) HF etch followed by a (NH 4)2 S treatment. Moreover, interfacial self-cleaning of nontreated GaAs wafers upon ALD of aluminum oxide using trimethyl aluminum precursor was examined. Transmission electron microscopy, electron energy loss spectroscopy (EELS) and capacitance-voltage (C-V) data showed slight differences among the nontreated, HF-only, and NH4OH treated samples. However the (NH4)2S treated sample showed improved capacitance-voltage characteristics as well as an improved aluminum oxide/GaAs interface compared to the other three samples. Additionally, the characteristic oxygen K EELS peak suggests the presence of a thin additional layer close to the center of the high- κ layer containing oxygen, tantalum, and aluminum, as a consequence of probable plasma damage to the high- κ layer during the TaN metal gate deposition.

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