PHOTODETECTION BY LIGHT-INDUCED BARRIER MODULATION IN Cu-DIFFUSED Au-CdS DIODES.

G. Lubberts, H. K. Buecher, B. C. Burkey, E. L. Wolf

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Modified Au-Cds:Cu Schottky barriers were prepared by diffusing Cu to a depth of 0. 1 to 0. 2 mu m into single crystals of CdS, prior to evaporating rectifying Au contacts. Modulation of essentially thermionic forward current by light-induced lowering of an electrostatic barrier leads to steady-state electron-per-photon gains in excess of 10**6 at light intensities lower than 5 multiplied by 10**1**1 photons cm** minus **2 sec** minus **1 where response times exceed 1 sec. Barrier-height determinations, in the dark and under illumination with 5000-A light, by means of internal photoemission, thermal activation energy, and J-V measurements, show unequivocally that under saturating light conditions the potential barrier is reduced by 0. 23 plus or minus 0. 03 V.

Original languageEnglish (US)
Title of host publicationUnknown Host Publication Title
Pages92-95
Number of pages4
StatePublished - 1800
EventInt Electron Devices Meet, 19th, Tech Dig, Pap - Washington, DC, USA
Duration: Dec 3 1973Dec 5 1973

Other

OtherInt Electron Devices Meet, 19th, Tech Dig, Pap
CityWashington, DC, USA
Period12/3/7312/5/73

Fingerprint

Modulation
Photons
Photoemission
Electron energy levels
Electrostatics
Activation energy
Lighting
Single crystals

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Lubberts, G., Buecher, H. K., Burkey, B. C., & Wolf, E. L. (1800). PHOTODETECTION BY LIGHT-INDUCED BARRIER MODULATION IN Cu-DIFFUSED Au-CdS DIODES. In Unknown Host Publication Title (pp. 92-95)

PHOTODETECTION BY LIGHT-INDUCED BARRIER MODULATION IN Cu-DIFFUSED Au-CdS DIODES. / Lubberts, G.; Buecher, H. K.; Burkey, B. C.; Wolf, E. L.

Unknown Host Publication Title. 1800. p. 92-95.

Research output: Chapter in Book/Report/Conference proceedingChapter

Lubberts, G, Buecher, HK, Burkey, BC & Wolf, EL 1800, PHOTODETECTION BY LIGHT-INDUCED BARRIER MODULATION IN Cu-DIFFUSED Au-CdS DIODES. in Unknown Host Publication Title. pp. 92-95, Int Electron Devices Meet, 19th, Tech Dig, Pap, Washington, DC, USA, 12/3/73.
Lubberts G, Buecher HK, Burkey BC, Wolf EL. PHOTODETECTION BY LIGHT-INDUCED BARRIER MODULATION IN Cu-DIFFUSED Au-CdS DIODES. In Unknown Host Publication Title. 1800. p. 92-95
Lubberts, G. ; Buecher, H. K. ; Burkey, B. C. ; Wolf, E. L. / PHOTODETECTION BY LIGHT-INDUCED BARRIER MODULATION IN Cu-DIFFUSED Au-CdS DIODES. Unknown Host Publication Title. 1800. pp. 92-95
@inbook{442de709874849baa008df25813340b9,
title = "PHOTODETECTION BY LIGHT-INDUCED BARRIER MODULATION IN Cu-DIFFUSED Au-CdS DIODES.",
abstract = "Modified Au-Cds:Cu Schottky barriers were prepared by diffusing Cu to a depth of 0. 1 to 0. 2 mu m into single crystals of CdS, prior to evaporating rectifying Au contacts. Modulation of essentially thermionic forward current by light-induced lowering of an electrostatic barrier leads to steady-state electron-per-photon gains in excess of 10**6 at light intensities lower than 5 multiplied by 10**1**1 photons cm** minus **2 sec** minus **1 where response times exceed 1 sec. Barrier-height determinations, in the dark and under illumination with 5000-A light, by means of internal photoemission, thermal activation energy, and J-V measurements, show unequivocally that under saturating light conditions the potential barrier is reduced by 0. 23 plus or minus 0. 03 V.",
author = "G. Lubberts and Buecher, {H. K.} and Burkey, {B. C.} and Wolf, {E. L.}",
year = "1800",
language = "English (US)",
pages = "92--95",
booktitle = "Unknown Host Publication Title",

}

TY - CHAP

T1 - PHOTODETECTION BY LIGHT-INDUCED BARRIER MODULATION IN Cu-DIFFUSED Au-CdS DIODES.

AU - Lubberts, G.

AU - Buecher, H. K.

AU - Burkey, B. C.

AU - Wolf, E. L.

PY - 1800

Y1 - 1800

N2 - Modified Au-Cds:Cu Schottky barriers were prepared by diffusing Cu to a depth of 0. 1 to 0. 2 mu m into single crystals of CdS, prior to evaporating rectifying Au contacts. Modulation of essentially thermionic forward current by light-induced lowering of an electrostatic barrier leads to steady-state electron-per-photon gains in excess of 10**6 at light intensities lower than 5 multiplied by 10**1**1 photons cm** minus **2 sec** minus **1 where response times exceed 1 sec. Barrier-height determinations, in the dark and under illumination with 5000-A light, by means of internal photoemission, thermal activation energy, and J-V measurements, show unequivocally that under saturating light conditions the potential barrier is reduced by 0. 23 plus or minus 0. 03 V.

AB - Modified Au-Cds:Cu Schottky barriers were prepared by diffusing Cu to a depth of 0. 1 to 0. 2 mu m into single crystals of CdS, prior to evaporating rectifying Au contacts. Modulation of essentially thermionic forward current by light-induced lowering of an electrostatic barrier leads to steady-state electron-per-photon gains in excess of 10**6 at light intensities lower than 5 multiplied by 10**1**1 photons cm** minus **2 sec** minus **1 where response times exceed 1 sec. Barrier-height determinations, in the dark and under illumination with 5000-A light, by means of internal photoemission, thermal activation energy, and J-V measurements, show unequivocally that under saturating light conditions the potential barrier is reduced by 0. 23 plus or minus 0. 03 V.

UR - http://www.scopus.com/inward/record.url?scp=0015941455&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0015941455&partnerID=8YFLogxK

M3 - Chapter

SP - 92

EP - 95

BT - Unknown Host Publication Title

ER -