Photodetection by light-induced barrier modulation in Cu-diffused AuSingle Bond signCdS diodes

G. Lubberts, B. C. Burkey, H. K. Bücher, E. L. Wolf

Research output: Contribution to journalArticle

Abstract

Modified Schottky barriers of the type Au-CdS: Cu were prepared by diffusing Cu to a depth of 0.1-0.2 μm into single crystals of CdS, prior to evaporating rectifying Au contacts. The electronic and photoelectronic properties of these junctions are adequately described by a simple model in which the Cu acts as an ionized acceptor, resulting in a "humped" potential barrier between the Au and the bulk CdS. Hole trapping by the acceptors under band-gap illumination reduces their ionization and, consequently, the hump height. The forward current density in the dark and under illumination can be accurately described by a thermionic emission model as J=A*T 2 exp { - e[V B+V H(0)]/kT exp}(eV/βkT), where the hump potential V H (0) is light sensitive and where β (1<β<1.35) arises from a weak voltage dependence of the barrier height. Barrier height determinations, in the dark and under illumination with 5000-Å light, by means of internal photoemission, thermal activation energy, and J-V measurements unequivocally show that under saturating light conditions the hump in the potential barrier is reduced by 0.23±0.03 V. This barrier mechanism of photoconductive response results in steady-state electron/photon gains in excess of 10 6 at light intensities lower that 5×10 11 photons cm -2 sec -1, where response times exceed 1 sec.

Original languageEnglish (US)
Pages (from-to)2180-2190
Number of pages11
JournalJournal of Applied Physics
Volume45
Issue number5
DOIs
StatePublished - 1974

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diodes
modulation
illumination
photoelectronics
thermionic emission
photons
luminous intensity
electric contacts
photoelectric emission
trapping
current density
activation energy
ionization
single crystals
electric potential
electronics
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Photodetection by light-induced barrier modulation in Cu-diffused AuSingle Bond signCdS diodes. / Lubberts, G.; Burkey, B. C.; Bücher, H. K.; Wolf, E. L.

In: Journal of Applied Physics, Vol. 45, No. 5, 1974, p. 2180-2190.

Research output: Contribution to journalArticle

Lubberts, G. ; Burkey, B. C. ; Bücher, H. K. ; Wolf, E. L. / Photodetection by light-induced barrier modulation in Cu-diffused AuSingle Bond signCdS diodes. In: Journal of Applied Physics. 1974 ; Vol. 45, No. 5. pp. 2180-2190.
@article{299bd617c4eb42d7872f113fc8f03cb4,
title = "Photodetection by light-induced barrier modulation in Cu-diffused AuSingle Bond signCdS diodes",
abstract = "Modified Schottky barriers of the type Au-CdS: Cu were prepared by diffusing Cu to a depth of 0.1-0.2 μm into single crystals of CdS, prior to evaporating rectifying Au contacts. The electronic and photoelectronic properties of these junctions are adequately described by a simple model in which the Cu acts as an ionized acceptor, resulting in a {"}humped{"} potential barrier between the Au and the bulk CdS. Hole trapping by the acceptors under band-gap illumination reduces their ionization and, consequently, the hump height. The forward current density in the dark and under illumination can be accurately described by a thermionic emission model as J=A*T 2 exp { - e[V B+V H(0)]/kT exp}(eV/βkT), where the hump potential V H (0) is light sensitive and where β (1<β<1.35) arises from a weak voltage dependence of the barrier height. Barrier height determinations, in the dark and under illumination with 5000-{\AA} light, by means of internal photoemission, thermal activation energy, and J-V measurements unequivocally show that under saturating light conditions the hump in the potential barrier is reduced by 0.23±0.03 V. This barrier mechanism of photoconductive response results in steady-state electron/photon gains in excess of 10 6 at light intensities lower that 5×10 11 photons cm -2 sec -1, where response times exceed 1 sec.",
author = "G. Lubberts and Burkey, {B. C.} and B{\"u}cher, {H. K.} and Wolf, {E. L.}",
year = "1974",
doi = "10.1063/1.1663566",
language = "English (US)",
volume = "45",
pages = "2180--2190",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "5",

}

TY - JOUR

T1 - Photodetection by light-induced barrier modulation in Cu-diffused AuSingle Bond signCdS diodes

AU - Lubberts, G.

AU - Burkey, B. C.

AU - Bücher, H. K.

AU - Wolf, E. L.

PY - 1974

Y1 - 1974

N2 - Modified Schottky barriers of the type Au-CdS: Cu were prepared by diffusing Cu to a depth of 0.1-0.2 μm into single crystals of CdS, prior to evaporating rectifying Au contacts. The electronic and photoelectronic properties of these junctions are adequately described by a simple model in which the Cu acts as an ionized acceptor, resulting in a "humped" potential barrier between the Au and the bulk CdS. Hole trapping by the acceptors under band-gap illumination reduces their ionization and, consequently, the hump height. The forward current density in the dark and under illumination can be accurately described by a thermionic emission model as J=A*T 2 exp { - e[V B+V H(0)]/kT exp}(eV/βkT), where the hump potential V H (0) is light sensitive and where β (1<β<1.35) arises from a weak voltage dependence of the barrier height. Barrier height determinations, in the dark and under illumination with 5000-Å light, by means of internal photoemission, thermal activation energy, and J-V measurements unequivocally show that under saturating light conditions the hump in the potential barrier is reduced by 0.23±0.03 V. This barrier mechanism of photoconductive response results in steady-state electron/photon gains in excess of 10 6 at light intensities lower that 5×10 11 photons cm -2 sec -1, where response times exceed 1 sec.

AB - Modified Schottky barriers of the type Au-CdS: Cu were prepared by diffusing Cu to a depth of 0.1-0.2 μm into single crystals of CdS, prior to evaporating rectifying Au contacts. The electronic and photoelectronic properties of these junctions are adequately described by a simple model in which the Cu acts as an ionized acceptor, resulting in a "humped" potential barrier between the Au and the bulk CdS. Hole trapping by the acceptors under band-gap illumination reduces their ionization and, consequently, the hump height. The forward current density in the dark and under illumination can be accurately described by a thermionic emission model as J=A*T 2 exp { - e[V B+V H(0)]/kT exp}(eV/βkT), where the hump potential V H (0) is light sensitive and where β (1<β<1.35) arises from a weak voltage dependence of the barrier height. Barrier height determinations, in the dark and under illumination with 5000-Å light, by means of internal photoemission, thermal activation energy, and J-V measurements unequivocally show that under saturating light conditions the hump in the potential barrier is reduced by 0.23±0.03 V. This barrier mechanism of photoconductive response results in steady-state electron/photon gains in excess of 10 6 at light intensities lower that 5×10 11 photons cm -2 sec -1, where response times exceed 1 sec.

UR - http://www.scopus.com/inward/record.url?scp=0016057571&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0016057571&partnerID=8YFLogxK

U2 - 10.1063/1.1663566

DO - 10.1063/1.1663566

M3 - Article

AN - SCOPUS:0016057571

VL - 45

SP - 2180

EP - 2190

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 5

ER -