Patterning metal contacts on monolayer MoS2 with vanishing Schottky barriers using thermal nanolithography

Xiaorui Zheng, Annalisa Calò, Edoardo Albisetti, Xiangyu Liu, Abdullah Sanad M. Alharbi, Ghidewon Arefe, Xiaochi Liu, Martin Spieser, Won Jong Yoo, Takashi Taniguchi, Kenji Watanabe, Carmela Aruta, Alberto Ciarrocchi, Andras Kis, Brian S. Lee, Michal Lipson, James Hone, Davood Shahrjerdi, Elisa Riedo

Research output: Contribution to journalArticle

Abstract

Two-dimensional semiconductors, such as molybdenum disulfide (MoS2), exhibit a variety of properties that could be useful in the development of novel electronic devices. However, nanopatterning metal electrodes on such atomic layers, which is typically achieved using electron beam lithography, is currently problematic, leading to non-ohmic contacts and high Schottky barriers. Here, we show that thermal scanning probe lithography can be used to pattern metal electrodes with high reproducibility, sub-10-nm resolution, and high throughput (105 μm2 h−1 per single probe). The approach, which offers simultaneous in situ imaging and patterning, does not require a vacuum, high energy, or charged beams, in contrast to electron beam lithography. Using this technique, we pattern metal electrodes in direct contact with monolayer MoS2 for top-gate and back-gate field-effect transistors. These devices exhibit vanishing Schottky barrier heights (around 0 meV), on/off ratios of 1010, no hysteresis, and subthreshold swings as low as 64 mV per decade without using negative capacitors or hetero-stacks.

Original languageEnglish (US)
Pages (from-to)17-25
Number of pages9
JournalNature Electronics
Volume2
Issue number1
DOIs
StatePublished - Jan 1 2019

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Nanolithography
electric contacts
Monolayers
lithography
Electron beam lithography
Metals
Electrodes
electrodes
electron beams
metals
molybdenum disulfides
Gates (transistor)
probes
high vacuum
Lithography
Molybdenum
Hysteresis
capacitors
Capacitors
field effect transistors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

Cite this

Patterning metal contacts on monolayer MoS2 with vanishing Schottky barriers using thermal nanolithography. / Zheng, Xiaorui; Calò, Annalisa; Albisetti, Edoardo; Liu, Xiangyu; Alharbi, Abdullah Sanad M.; Arefe, Ghidewon; Liu, Xiaochi; Spieser, Martin; Yoo, Won Jong; Taniguchi, Takashi; Watanabe, Kenji; Aruta, Carmela; Ciarrocchi, Alberto; Kis, Andras; Lee, Brian S.; Lipson, Michal; Hone, James; Shahrjerdi, Davood; Riedo, Elisa.

In: Nature Electronics, Vol. 2, No. 1, 01.01.2019, p. 17-25.

Research output: Contribution to journalArticle

Zheng, X, Calò, A, Albisetti, E, Liu, X, Alharbi, ASM, Arefe, G, Liu, X, Spieser, M, Yoo, WJ, Taniguchi, T, Watanabe, K, Aruta, C, Ciarrocchi, A, Kis, A, Lee, BS, Lipson, M, Hone, J, Shahrjerdi, D & Riedo, E 2019, 'Patterning metal contacts on monolayer MoS2 with vanishing Schottky barriers using thermal nanolithography', Nature Electronics, vol. 2, no. 1, pp. 17-25. https://doi.org/10.1038/s41928-018-0191-0
Zheng, Xiaorui ; Calò, Annalisa ; Albisetti, Edoardo ; Liu, Xiangyu ; Alharbi, Abdullah Sanad M. ; Arefe, Ghidewon ; Liu, Xiaochi ; Spieser, Martin ; Yoo, Won Jong ; Taniguchi, Takashi ; Watanabe, Kenji ; Aruta, Carmela ; Ciarrocchi, Alberto ; Kis, Andras ; Lee, Brian S. ; Lipson, Michal ; Hone, James ; Shahrjerdi, Davood ; Riedo, Elisa. / Patterning metal contacts on monolayer MoS2 with vanishing Schottky barriers using thermal nanolithography. In: Nature Electronics. 2019 ; Vol. 2, No. 1. pp. 17-25.
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