Orthogonal spin transfer MRAM

D. Bedau, D. Backes, H. Liu, J. Langer, P. Manandhar, A. D. Kent

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Spin-Transfer Magnetic Random Access Memory (ST-MRAM) devices hold great promise as a universal memory [Katine 2008]. ST-MRAM is non-volatile, has a small cell size, high endurance and may match the speed of SRAM. A disadvantage of the common collinearly magnetized ST-MRAM is their non-deterministic switching process, which leads to long switching times and broad switching time distributions [Devolder 2008, Koch 2004]. This delay is due to the fact that the torque is zero if the layers are either parallel or antiparallel [Slonczewski 1996] and hence switching cannot be initiated by the torque alone. Typically the process is started by an initial misalignment of the free layer stemming from thermal excitations. Relying on thermal initiation leads to incoherent reversal with an unpredictable incubation delay in the ns range [Devolder 2008] and broad switching time distributions [Koch 2004]

    Original languageEnglish (US)
    Title of host publication69th Device Research Conference, DRC 2011 - Conference Digest
    Pages165-166
    Number of pages2
    DOIs
    StatePublished - 2011
    Event69th Device Research Conference, DRC 2011 - Santa Barbara, CA, United States
    Duration: Jun 20 2011Jun 22 2011

    Other

    Other69th Device Research Conference, DRC 2011
    CountryUnited States
    CitySanta Barbara, CA
    Period6/20/116/22/11

    Fingerprint

    Data storage equipment
    Torque
    Static random access storage
    Durability
    Hot Temperature

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

    Cite this

    Bedau, D., Backes, D., Liu, H., Langer, J., Manandhar, P., & Kent, A. D. (2011). Orthogonal spin transfer MRAM. In 69th Device Research Conference, DRC 2011 - Conference Digest (pp. 165-166). [5994472] https://doi.org/10.1109/DRC.2011.5994472

    Orthogonal spin transfer MRAM. / Bedau, D.; Backes, D.; Liu, H.; Langer, J.; Manandhar, P.; Kent, A. D.

    69th Device Research Conference, DRC 2011 - Conference Digest. 2011. p. 165-166 5994472.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Bedau, D, Backes, D, Liu, H, Langer, J, Manandhar, P & Kent, AD 2011, Orthogonal spin transfer MRAM. in 69th Device Research Conference, DRC 2011 - Conference Digest., 5994472, pp. 165-166, 69th Device Research Conference, DRC 2011, Santa Barbara, CA, United States, 6/20/11. https://doi.org/10.1109/DRC.2011.5994472
    Bedau D, Backes D, Liu H, Langer J, Manandhar P, Kent AD. Orthogonal spin transfer MRAM. In 69th Device Research Conference, DRC 2011 - Conference Digest. 2011. p. 165-166. 5994472 https://doi.org/10.1109/DRC.2011.5994472
    Bedau, D. ; Backes, D. ; Liu, H. ; Langer, J. ; Manandhar, P. ; Kent, A. D. / Orthogonal spin transfer MRAM. 69th Device Research Conference, DRC 2011 - Conference Digest. 2011. pp. 165-166
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