Origin of substrate hole current after gate oxide breakdown

Mahmoud Rasras, Ingrid De Wolf, Guido Groeseneken, Robin Degraeve, Herman E. Maes

Research output: Contribution to journalArticle

Abstract

The origin of the substrate hole currents after gate oxide breakdown in metal-oxide-semiconductor field-effect transistor (nMosFET) devices is investigated, using spectroscopic and conventional photon emission microscopy. Spectral analysis of light from the breakdown locations, under positive gate bias, indicates that hot electrons mediate the light emitted from the breakdown spots. These hot electrons are generated by the high electric fields at the location of the breakdown. Furthermore, light emission due to substrate hole recombination with electrons injected from the gate through the leakage path (breakdown location) dominates the light emission spectrum under negative gate bias. This finding is further verified using carrier separation measurements. In these measurements, minority carrier currents induced by the light emitted at the breakdown location and measured at a remote pn junction are compared with the substrate hole currents before and after oxide breakdown. These measurements prove that under positive gate bias, the substrate hole current and the light emission from the breakdown locations, are dominated by hot electron impact ionization mechanism in the substrate.

Original languageEnglish (US)
Pages (from-to)2155-2160
Number of pages6
JournalJournal of Applied Physics
Volume91
Issue number3
DOIs
StatePublished - Feb 1 2002

Fingerprint

breakdown
oxides
hot electrons
light emission
minority carriers
metal oxide semiconductors
electron impact
spectrum analysis
emission spectra
leakage
field effect transistors
microscopy
ionization
electric fields
photons
electrons

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Rasras, M., Wolf, I. D., Groeseneken, G., Degraeve, R., & Maes, H. E. (2002). Origin of substrate hole current after gate oxide breakdown. Journal of Applied Physics, 91(3), 2155-2160. https://doi.org/10.1063/1.1434550

Origin of substrate hole current after gate oxide breakdown. / Rasras, Mahmoud; Wolf, Ingrid De; Groeseneken, Guido; Degraeve, Robin; Maes, Herman E.

In: Journal of Applied Physics, Vol. 91, No. 3, 01.02.2002, p. 2155-2160.

Research output: Contribution to journalArticle

Rasras, M, Wolf, ID, Groeseneken, G, Degraeve, R & Maes, HE 2002, 'Origin of substrate hole current after gate oxide breakdown', Journal of Applied Physics, vol. 91, no. 3, pp. 2155-2160. https://doi.org/10.1063/1.1434550
Rasras, Mahmoud ; Wolf, Ingrid De ; Groeseneken, Guido ; Degraeve, Robin ; Maes, Herman E. / Origin of substrate hole current after gate oxide breakdown. In: Journal of Applied Physics. 2002 ; Vol. 91, No. 3. pp. 2155-2160.
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