Optimization of the chemical vapor deposition process for gallium nitride

Pradeep George, Jiandong Meng, Yogesh Jaluria

    Research output: Contribution to conferencePaper

    Abstract

    Simulation and optimization of the Metalorganic chemical vapor deposition (MOCVD) process for the deposition of Gallium Nitride (GaN) in a rotating-disk reactor is studied. Precursors, trimethylgallium (TMGa) and ammonia (NH3) are carried by hydrogen (H2). The focus of the study is on the rate of deposition and on the uniformity of the thin film. The level of uniformity needed depends on the intended application, with electronic and optical materials imposing the most stringent demands. Large area film thickness and composition uniformity are achieved by proper control of the governing transport processes. This study is broadly divided into three parts. Initially, thin film deposition is simulated by the Computational Fluid Dynamics (CFD) model. The chemistry model has 17 gas phase and 23 surface species participating in 17 gas phase and 52 surface reactions. These numerical simulations are used to determine the effects of important design parameters and operating conditions on the deposition rate and film uniformity. Two design variables, inlet velocity and inlet precursor concentration ratio, which have a significant effect on the deposition rate and uniformity of the film are identified. Inlet precursor concentration ratio is defined as the ratio of the volume flow rate of ammonia to the volume flow rate of trimethylgallium. In the second part, response surfaces for deposition rate and uniformity as a function of inlet velocity and inlet precursor concentration are generated. Compromise response surface method (CRSM) is used to develop the response surfaces. Lastly, the response surfaces are used to generate the Pareto front for the conflicting objectives of optimal deposition rate and uniformity. The trade-off between deposition rate and uniformity is captured by the Pareto front.

    Original languageEnglish (US)
    StatePublished - Jan 1 2014
    Event15th International Heat Transfer Conference, IHTC 2014 - Kyoto, Japan
    Duration: Aug 10 2014Aug 15 2014

    Other

    Other15th International Heat Transfer Conference, IHTC 2014
    CountryJapan
    CityKyoto
    Period8/10/148/15/14

    Fingerprint

    Gallium nitride
    gallium nitrides
    Deposition rates
    Chemical vapor deposition
    vapor deposition
    optimization
    Ammonia
    Flow rate
    Thin films
    Optical materials
    Metallorganic chemical vapor deposition
    Surface reactions
    Rotating disks
    ammonia
    Gases
    flow velocity
    Film thickness
    vapor phases
    Dynamic models
    Computational fluid dynamics

    Keywords

    • Computational fluid dynamics
    • Materials processing
    • Numerical simulation

    ASJC Scopus subject areas

    • Mechanical Engineering
    • Condensed Matter Physics

    Cite this

    George, P., Meng, J., & Jaluria, Y. (2014). Optimization of the chemical vapor deposition process for gallium nitride. Paper presented at 15th International Heat Transfer Conference, IHTC 2014, Kyoto, Japan.

    Optimization of the chemical vapor deposition process for gallium nitride. / George, Pradeep; Meng, Jiandong; Jaluria, Yogesh.

    2014. Paper presented at 15th International Heat Transfer Conference, IHTC 2014, Kyoto, Japan.

    Research output: Contribution to conferencePaper

    George, P, Meng, J & Jaluria, Y 2014, 'Optimization of the chemical vapor deposition process for gallium nitride' Paper presented at 15th International Heat Transfer Conference, IHTC 2014, Kyoto, Japan, 8/10/14 - 8/15/14, .
    George P, Meng J, Jaluria Y. Optimization of the chemical vapor deposition process for gallium nitride. 2014. Paper presented at 15th International Heat Transfer Conference, IHTC 2014, Kyoto, Japan.
    George, Pradeep ; Meng, Jiandong ; Jaluria, Yogesh. / Optimization of the chemical vapor deposition process for gallium nitride. Paper presented at 15th International Heat Transfer Conference, IHTC 2014, Kyoto, Japan.
    @conference{4e337c91ef1c489f9123dc87c8af8f20,
    title = "Optimization of the chemical vapor deposition process for gallium nitride",
    abstract = "Simulation and optimization of the Metalorganic chemical vapor deposition (MOCVD) process for the deposition of Gallium Nitride (GaN) in a rotating-disk reactor is studied. Precursors, trimethylgallium (TMGa) and ammonia (NH3) are carried by hydrogen (H2). The focus of the study is on the rate of deposition and on the uniformity of the thin film. The level of uniformity needed depends on the intended application, with electronic and optical materials imposing the most stringent demands. Large area film thickness and composition uniformity are achieved by proper control of the governing transport processes. This study is broadly divided into three parts. Initially, thin film deposition is simulated by the Computational Fluid Dynamics (CFD) model. The chemistry model has 17 gas phase and 23 surface species participating in 17 gas phase and 52 surface reactions. These numerical simulations are used to determine the effects of important design parameters and operating conditions on the deposition rate and film uniformity. Two design variables, inlet velocity and inlet precursor concentration ratio, which have a significant effect on the deposition rate and uniformity of the film are identified. Inlet precursor concentration ratio is defined as the ratio of the volume flow rate of ammonia to the volume flow rate of trimethylgallium. In the second part, response surfaces for deposition rate and uniformity as a function of inlet velocity and inlet precursor concentration are generated. Compromise response surface method (CRSM) is used to develop the response surfaces. Lastly, the response surfaces are used to generate the Pareto front for the conflicting objectives of optimal deposition rate and uniformity. The trade-off between deposition rate and uniformity is captured by the Pareto front.",
    keywords = "Computational fluid dynamics, Materials processing, Numerical simulation",
    author = "Pradeep George and Jiandong Meng and Yogesh Jaluria",
    year = "2014",
    month = "1",
    day = "1",
    language = "English (US)",
    note = "15th International Heat Transfer Conference, IHTC 2014 ; Conference date: 10-08-2014 Through 15-08-2014",

    }

    TY - CONF

    T1 - Optimization of the chemical vapor deposition process for gallium nitride

    AU - George, Pradeep

    AU - Meng, Jiandong

    AU - Jaluria, Yogesh

    PY - 2014/1/1

    Y1 - 2014/1/1

    N2 - Simulation and optimization of the Metalorganic chemical vapor deposition (MOCVD) process for the deposition of Gallium Nitride (GaN) in a rotating-disk reactor is studied. Precursors, trimethylgallium (TMGa) and ammonia (NH3) are carried by hydrogen (H2). The focus of the study is on the rate of deposition and on the uniformity of the thin film. The level of uniformity needed depends on the intended application, with electronic and optical materials imposing the most stringent demands. Large area film thickness and composition uniformity are achieved by proper control of the governing transport processes. This study is broadly divided into three parts. Initially, thin film deposition is simulated by the Computational Fluid Dynamics (CFD) model. The chemistry model has 17 gas phase and 23 surface species participating in 17 gas phase and 52 surface reactions. These numerical simulations are used to determine the effects of important design parameters and operating conditions on the deposition rate and film uniformity. Two design variables, inlet velocity and inlet precursor concentration ratio, which have a significant effect on the deposition rate and uniformity of the film are identified. Inlet precursor concentration ratio is defined as the ratio of the volume flow rate of ammonia to the volume flow rate of trimethylgallium. In the second part, response surfaces for deposition rate and uniformity as a function of inlet velocity and inlet precursor concentration are generated. Compromise response surface method (CRSM) is used to develop the response surfaces. Lastly, the response surfaces are used to generate the Pareto front for the conflicting objectives of optimal deposition rate and uniformity. The trade-off between deposition rate and uniformity is captured by the Pareto front.

    AB - Simulation and optimization of the Metalorganic chemical vapor deposition (MOCVD) process for the deposition of Gallium Nitride (GaN) in a rotating-disk reactor is studied. Precursors, trimethylgallium (TMGa) and ammonia (NH3) are carried by hydrogen (H2). The focus of the study is on the rate of deposition and on the uniformity of the thin film. The level of uniformity needed depends on the intended application, with electronic and optical materials imposing the most stringent demands. Large area film thickness and composition uniformity are achieved by proper control of the governing transport processes. This study is broadly divided into three parts. Initially, thin film deposition is simulated by the Computational Fluid Dynamics (CFD) model. The chemistry model has 17 gas phase and 23 surface species participating in 17 gas phase and 52 surface reactions. These numerical simulations are used to determine the effects of important design parameters and operating conditions on the deposition rate and film uniformity. Two design variables, inlet velocity and inlet precursor concentration ratio, which have a significant effect on the deposition rate and uniformity of the film are identified. Inlet precursor concentration ratio is defined as the ratio of the volume flow rate of ammonia to the volume flow rate of trimethylgallium. In the second part, response surfaces for deposition rate and uniformity as a function of inlet velocity and inlet precursor concentration are generated. Compromise response surface method (CRSM) is used to develop the response surfaces. Lastly, the response surfaces are used to generate the Pareto front for the conflicting objectives of optimal deposition rate and uniformity. The trade-off between deposition rate and uniformity is captured by the Pareto front.

    KW - Computational fluid dynamics

    KW - Materials processing

    KW - Numerical simulation

    UR - http://www.scopus.com/inward/record.url?scp=84964558144&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84964558144&partnerID=8YFLogxK

    M3 - Paper

    ER -