Optimization of chemical vapor deposition process

Pradeep George, Chang Gea Hae, Yogesh Jaluria

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Chemical Vapor Deposition (CVD) process is simulated and optimized for the deposition of a thin film of silicon from silane. The key focus is on the rate of deposition and on the quality of the thin film produced. The intended application dictates the level of quality need for the film. Proper control of the governing transport processes results in large area film thickness and composition uniformity. A vertical impinging CVD reactor is considered. The goal is to optimize the CVD system. The effect of important design parameters and operating conditions are studied using numerical simulations. Then Compromise Response Surface Method (CRSM) is used to model the process over a range of susceptor temperature and inlet velocity of the reaction gases. The resulting response surface is used to optimize the CVD system.

Original languageEnglish (US)
Title of host publicationProceedings of 2006 ASME International Design Engineering Technical Conferences and Computers and Information In Engineering Conference, DETC2006
Volume2006
StatePublished - Nov 29 2006
Event2006 ASME International Design Engineering Technical Conferences and Computers and Information In Engineering Conference, DETC2006 - Philadelphia, PA, United States
Duration: Sep 10 2006Sep 13 2006

Other

Other2006 ASME International Design Engineering Technical Conferences and Computers and Information In Engineering Conference, DETC2006
CountryUnited States
CityPhiladelphia, PA
Period9/10/069/13/06

Fingerprint

Chemical Vapor Deposition
Chemical vapor deposition
Optimization
Thin Films
Optimise
Response Surface Method
Thin films
Transport Processes
Response Surface
Parameter Design
Silanes
Uniformity
Reactor
Film thickness
Silicon
Vertical
Numerical Simulation
Computer simulation
Chemical analysis
Gases

ASJC Scopus subject areas

  • Modeling and Simulation
  • Mechanical Engineering
  • Computer Science Applications
  • Computer Graphics and Computer-Aided Design

Cite this

George, P., Hae, C. G., & Jaluria, Y. (2006). Optimization of chemical vapor deposition process. In Proceedings of 2006 ASME International Design Engineering Technical Conferences and Computers and Information In Engineering Conference, DETC2006 (Vol. 2006)

Optimization of chemical vapor deposition process. / George, Pradeep; Hae, Chang Gea; Jaluria, Yogesh.

Proceedings of 2006 ASME International Design Engineering Technical Conferences and Computers and Information In Engineering Conference, DETC2006. Vol. 2006 2006.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

George, P, Hae, CG & Jaluria, Y 2006, Optimization of chemical vapor deposition process. in Proceedings of 2006 ASME International Design Engineering Technical Conferences and Computers and Information In Engineering Conference, DETC2006. vol. 2006, 2006 ASME International Design Engineering Technical Conferences and Computers and Information In Engineering Conference, DETC2006, Philadelphia, PA, United States, 9/10/06.
George P, Hae CG, Jaluria Y. Optimization of chemical vapor deposition process. In Proceedings of 2006 ASME International Design Engineering Technical Conferences and Computers and Information In Engineering Conference, DETC2006. Vol. 2006. 2006
George, Pradeep ; Hae, Chang Gea ; Jaluria, Yogesh. / Optimization of chemical vapor deposition process. Proceedings of 2006 ASME International Design Engineering Technical Conferences and Computers and Information In Engineering Conference, DETC2006. Vol. 2006 2006.
@inproceedings{c65a600a4c6647c8b4af5c35be38e796,
title = "Optimization of chemical vapor deposition process",
abstract = "Chemical Vapor Deposition (CVD) process is simulated and optimized for the deposition of a thin film of silicon from silane. The key focus is on the rate of deposition and on the quality of the thin film produced. The intended application dictates the level of quality need for the film. Proper control of the governing transport processes results in large area film thickness and composition uniformity. A vertical impinging CVD reactor is considered. The goal is to optimize the CVD system. The effect of important design parameters and operating conditions are studied using numerical simulations. Then Compromise Response Surface Method (CRSM) is used to model the process over a range of susceptor temperature and inlet velocity of the reaction gases. The resulting response surface is used to optimize the CVD system.",
author = "Pradeep George and Hae, {Chang Gea} and Yogesh Jaluria",
year = "2006",
month = "11",
day = "29",
language = "English (US)",
isbn = "079183784X",
volume = "2006",
booktitle = "Proceedings of 2006 ASME International Design Engineering Technical Conferences and Computers and Information In Engineering Conference, DETC2006",

}

TY - GEN

T1 - Optimization of chemical vapor deposition process

AU - George, Pradeep

AU - Hae, Chang Gea

AU - Jaluria, Yogesh

PY - 2006/11/29

Y1 - 2006/11/29

N2 - Chemical Vapor Deposition (CVD) process is simulated and optimized for the deposition of a thin film of silicon from silane. The key focus is on the rate of deposition and on the quality of the thin film produced. The intended application dictates the level of quality need for the film. Proper control of the governing transport processes results in large area film thickness and composition uniformity. A vertical impinging CVD reactor is considered. The goal is to optimize the CVD system. The effect of important design parameters and operating conditions are studied using numerical simulations. Then Compromise Response Surface Method (CRSM) is used to model the process over a range of susceptor temperature and inlet velocity of the reaction gases. The resulting response surface is used to optimize the CVD system.

AB - Chemical Vapor Deposition (CVD) process is simulated and optimized for the deposition of a thin film of silicon from silane. The key focus is on the rate of deposition and on the quality of the thin film produced. The intended application dictates the level of quality need for the film. Proper control of the governing transport processes results in large area film thickness and composition uniformity. A vertical impinging CVD reactor is considered. The goal is to optimize the CVD system. The effect of important design parameters and operating conditions are studied using numerical simulations. Then Compromise Response Surface Method (CRSM) is used to model the process over a range of susceptor temperature and inlet velocity of the reaction gases. The resulting response surface is used to optimize the CVD system.

UR - http://www.scopus.com/inward/record.url?scp=33751311077&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33751311077&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:33751311077

SN - 079183784X

SN - 9780791837849

VL - 2006

BT - Proceedings of 2006 ASME International Design Engineering Technical Conferences and Computers and Information In Engineering Conference, DETC2006

ER -