Optimization of chemical vapor deposition process

Pradeep George, Chang Gea Hae, Yogesh Jaluria

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Chemical Vapor Deposition (CVD) process is simulated and optimized for the deposition of a thin film of silicon from silane. The key focus is on the rate of deposition and on the quality of the thin film produced. The intended application dictates the level of quality need for the film. Proper control of the governing transport processes results in large area film thickness and composition uniformity. A vertical impinging CVD reactor is considered. The goal is to optimize the CVD system. The effect of important design parameters and operating conditions are studied using numerical simulations. Then Compromise Response Surface Method (CRSM) is used to model the process over a range of susceptor temperature and inlet velocity of the reaction gases. The resulting response surface is used to optimize the CVD system.

    Original languageEnglish (US)
    Title of host publicationProceedings of 2006 ASME International Design Engineering Technical Conferences and Computers and Information In Engineering Conference, DETC2006
    Volume2006
    StatePublished - Nov 29 2006
    Event2006 ASME International Design Engineering Technical Conferences and Computers and Information In Engineering Conference, DETC2006 - Philadelphia, PA, United States
    Duration: Sep 10 2006Sep 13 2006

    Other

    Other2006 ASME International Design Engineering Technical Conferences and Computers and Information In Engineering Conference, DETC2006
    CountryUnited States
    CityPhiladelphia, PA
    Period9/10/069/13/06

    Fingerprint

    Chemical Vapor Deposition
    Chemical vapor deposition
    Optimization
    Thin Films
    Optimise
    Response Surface Method
    Thin films
    Transport Processes
    Response Surface
    Parameter Design
    Silanes
    Uniformity
    Reactor
    Film thickness
    Silicon
    Vertical
    Numerical Simulation
    Computer simulation
    Chemical analysis
    Gases

    ASJC Scopus subject areas

    • Modeling and Simulation
    • Mechanical Engineering
    • Computer Science Applications
    • Computer Graphics and Computer-Aided Design

    Cite this

    George, P., Hae, C. G., & Jaluria, Y. (2006). Optimization of chemical vapor deposition process. In Proceedings of 2006 ASME International Design Engineering Technical Conferences and Computers and Information In Engineering Conference, DETC2006 (Vol. 2006)

    Optimization of chemical vapor deposition process. / George, Pradeep; Hae, Chang Gea; Jaluria, Yogesh.

    Proceedings of 2006 ASME International Design Engineering Technical Conferences and Computers and Information In Engineering Conference, DETC2006. Vol. 2006 2006.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    George, P, Hae, CG & Jaluria, Y 2006, Optimization of chemical vapor deposition process. in Proceedings of 2006 ASME International Design Engineering Technical Conferences and Computers and Information In Engineering Conference, DETC2006. vol. 2006, 2006 ASME International Design Engineering Technical Conferences and Computers and Information In Engineering Conference, DETC2006, Philadelphia, PA, United States, 9/10/06.
    George P, Hae CG, Jaluria Y. Optimization of chemical vapor deposition process. In Proceedings of 2006 ASME International Design Engineering Technical Conferences and Computers and Information In Engineering Conference, DETC2006. Vol. 2006. 2006
    George, Pradeep ; Hae, Chang Gea ; Jaluria, Yogesh. / Optimization of chemical vapor deposition process. Proceedings of 2006 ASME International Design Engineering Technical Conferences and Computers and Information In Engineering Conference, DETC2006. Vol. 2006 2006.
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