Optimal III-nitride HEMTs - From materials and device design to compact model of the 2DEG charge density

Kexin Li, Shaloo Rakheja

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, we develop a physically motivated compact model of the charge-voltage (Q-V) characteristics in various III-nitride high-electron mobility transistors (HEMTs) operating under highly non-equilibrium transport conditions, i.e. high drain-source current. By solving the coupled Schrödinger-Poisson equation and incorporating the two-dimensional electrostatics in the channel, we obtain the charge at the top-of-the-barrier for various applied terminal voltages. The Q-V model accounts for cutting off of the negative momenta states from the drain terminal under high drain-source bias and when the transmission in the channel is quasi-ballistic. We specifically focus on AlGaN and AlInN as barrier materials and InGaN and GaN as the channel material in the heterostructure. The Q-V model is verified and calibrated against numerical results using the commercial TCAD simulator Sentaurus from Synopsys for a 20-nm channel length III-nitride HEMT. With 10 fitting parameters, most of which have a physical origin and can easily be obtained from numerical or experimental calibration, the compact Q-V model allows us to study the limits and opportunities of III-nitride technology. We also identify optimal material and geometrical parameters of the device that maximize the carrier concentration in the HEMT channel in order to achieve superior RF performance. Additionally, the compact charge model can be easily integrated in a hierarchical circuit simulator, such as Keysight ADS and CADENCE, to facilitate circuit design and optimization of various technology parameters.

Original languageEnglish (US)
Title of host publicationGallium Nitride Materials and Devices XII
PublisherSPIE
Volume10104
ISBN (Electronic)9781510606494
DOIs
StatePublished - 2017
EventGallium Nitride Materials and Devices XII - San Francisco, United States
Duration: Jan 30 2017Feb 2 2017

Other

OtherGallium Nitride Materials and Devices XII
CountryUnited States
CitySan Francisco
Period1/30/172/2/17

Fingerprint

Two dimensional electron gas
Nitrides
High electron mobility transistors
Charge density
high electron mobility transistors
nitrides
Charge
Electron
simulators
Simulator
Simulators
Voltage
AlGaN
InGaN
Model
Heterostructures
Networks (circuits)
Circuit Design
Poisson equation
Electric potential

Keywords

  • 2D electrostatics
  • Device optimization
  • III-nitride technology
  • Landauer transmission
  • Quasi-ballistic transport
  • TCAD

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Optimal III-nitride HEMTs - From materials and device design to compact model of the 2DEG charge density. / Li, Kexin; Rakheja, Shaloo.

Gallium Nitride Materials and Devices XII. Vol. 10104 SPIE, 2017. 1010418.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Li, K & Rakheja, S 2017, Optimal III-nitride HEMTs - From materials and device design to compact model of the 2DEG charge density. in Gallium Nitride Materials and Devices XII. vol. 10104, 1010418, SPIE, Gallium Nitride Materials and Devices XII, San Francisco, United States, 1/30/17. https://doi.org/10.1117/12.2251582
@inproceedings{f0f57ca7da8c4aa3925cdeee70ec107c,
title = "Optimal III-nitride HEMTs - From materials and device design to compact model of the 2DEG charge density",
abstract = "In this paper, we develop a physically motivated compact model of the charge-voltage (Q-V) characteristics in various III-nitride high-electron mobility transistors (HEMTs) operating under highly non-equilibrium transport conditions, i.e. high drain-source current. By solving the coupled Schr{\"o}dinger-Poisson equation and incorporating the two-dimensional electrostatics in the channel, we obtain the charge at the top-of-the-barrier for various applied terminal voltages. The Q-V model accounts for cutting off of the negative momenta states from the drain terminal under high drain-source bias and when the transmission in the channel is quasi-ballistic. We specifically focus on AlGaN and AlInN as barrier materials and InGaN and GaN as the channel material in the heterostructure. The Q-V model is verified and calibrated against numerical results using the commercial TCAD simulator Sentaurus from Synopsys for a 20-nm channel length III-nitride HEMT. With 10 fitting parameters, most of which have a physical origin and can easily be obtained from numerical or experimental calibration, the compact Q-V model allows us to study the limits and opportunities of III-nitride technology. We also identify optimal material and geometrical parameters of the device that maximize the carrier concentration in the HEMT channel in order to achieve superior RF performance. Additionally, the compact charge model can be easily integrated in a hierarchical circuit simulator, such as Keysight ADS and CADENCE, to facilitate circuit design and optimization of various technology parameters.",
keywords = "2D electrostatics, Device optimization, III-nitride technology, Landauer transmission, Quasi-ballistic transport, TCAD",
author = "Kexin Li and Shaloo Rakheja",
year = "2017",
doi = "10.1117/12.2251582",
language = "English (US)",
volume = "10104",
booktitle = "Gallium Nitride Materials and Devices XII",
publisher = "SPIE",
address = "United States",

}

TY - GEN

T1 - Optimal III-nitride HEMTs - From materials and device design to compact model of the 2DEG charge density

AU - Li, Kexin

AU - Rakheja, Shaloo

PY - 2017

Y1 - 2017

N2 - In this paper, we develop a physically motivated compact model of the charge-voltage (Q-V) characteristics in various III-nitride high-electron mobility transistors (HEMTs) operating under highly non-equilibrium transport conditions, i.e. high drain-source current. By solving the coupled Schrödinger-Poisson equation and incorporating the two-dimensional electrostatics in the channel, we obtain the charge at the top-of-the-barrier for various applied terminal voltages. The Q-V model accounts for cutting off of the negative momenta states from the drain terminal under high drain-source bias and when the transmission in the channel is quasi-ballistic. We specifically focus on AlGaN and AlInN as barrier materials and InGaN and GaN as the channel material in the heterostructure. The Q-V model is verified and calibrated against numerical results using the commercial TCAD simulator Sentaurus from Synopsys for a 20-nm channel length III-nitride HEMT. With 10 fitting parameters, most of which have a physical origin and can easily be obtained from numerical or experimental calibration, the compact Q-V model allows us to study the limits and opportunities of III-nitride technology. We also identify optimal material and geometrical parameters of the device that maximize the carrier concentration in the HEMT channel in order to achieve superior RF performance. Additionally, the compact charge model can be easily integrated in a hierarchical circuit simulator, such as Keysight ADS and CADENCE, to facilitate circuit design and optimization of various technology parameters.

AB - In this paper, we develop a physically motivated compact model of the charge-voltage (Q-V) characteristics in various III-nitride high-electron mobility transistors (HEMTs) operating under highly non-equilibrium transport conditions, i.e. high drain-source current. By solving the coupled Schrödinger-Poisson equation and incorporating the two-dimensional electrostatics in the channel, we obtain the charge at the top-of-the-barrier for various applied terminal voltages. The Q-V model accounts for cutting off of the negative momenta states from the drain terminal under high drain-source bias and when the transmission in the channel is quasi-ballistic. We specifically focus on AlGaN and AlInN as barrier materials and InGaN and GaN as the channel material in the heterostructure. The Q-V model is verified and calibrated against numerical results using the commercial TCAD simulator Sentaurus from Synopsys for a 20-nm channel length III-nitride HEMT. With 10 fitting parameters, most of which have a physical origin and can easily be obtained from numerical or experimental calibration, the compact Q-V model allows us to study the limits and opportunities of III-nitride technology. We also identify optimal material and geometrical parameters of the device that maximize the carrier concentration in the HEMT channel in order to achieve superior RF performance. Additionally, the compact charge model can be easily integrated in a hierarchical circuit simulator, such as Keysight ADS and CADENCE, to facilitate circuit design and optimization of various technology parameters.

KW - 2D electrostatics

KW - Device optimization

KW - III-nitride technology

KW - Landauer transmission

KW - Quasi-ballistic transport

KW - TCAD

UR - http://www.scopus.com/inward/record.url?scp=85016955785&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85016955785&partnerID=8YFLogxK

U2 - 10.1117/12.2251582

DO - 10.1117/12.2251582

M3 - Conference contribution

AN - SCOPUS:85016955785

VL - 10104

BT - Gallium Nitride Materials and Devices XII

PB - SPIE

ER -