Optimal capping layer thickness for stacked quantum dots

X. B. Niu, Y. J. Lee, Russel Caflisch, C. Ratsch

Research output: Contribution to journalArticle

Abstract

We study the effect of strain on the vertical and lateral self-organization of nanoscale patterns and stacked quantum dots during epitaxial growth. The computational approach is based on the level set method in combination with an atomistic strain code. Strain changes the energetics of microscopic parameters during growth, and thus determines the nucleation sites and the growth of islands and dots. Our results show that strain can lead to vertical alignment as well as lateral organization. Moreover, our simulations suggest that there is an optimal thickness of the capping layer to get the best alignment and most uniform size distribution of stacked quantum dots, and that its variation can be used to control the formation of interesting structures.

Original languageEnglish (US)
Article number086103
JournalPhysical Review Letters
Volume101
Issue number8
DOIs
StatePublished - Aug 22 2008

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quantum dots
alignment
nucleation
simulation

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Optimal capping layer thickness for stacked quantum dots. / Niu, X. B.; Lee, Y. J.; Caflisch, Russel; Ratsch, C.

In: Physical Review Letters, Vol. 101, No. 8, 086103, 22.08.2008.

Research output: Contribution to journalArticle

Niu, X. B. ; Lee, Y. J. ; Caflisch, Russel ; Ratsch, C. / Optimal capping layer thickness for stacked quantum dots. In: Physical Review Letters. 2008 ; Vol. 101, No. 8.
@article{a09535c87e384d9da3015c85ffb67b2e,
title = "Optimal capping layer thickness for stacked quantum dots",
abstract = "We study the effect of strain on the vertical and lateral self-organization of nanoscale patterns and stacked quantum dots during epitaxial growth. The computational approach is based on the level set method in combination with an atomistic strain code. Strain changes the energetics of microscopic parameters during growth, and thus determines the nucleation sites and the growth of islands and dots. Our results show that strain can lead to vertical alignment as well as lateral organization. Moreover, our simulations suggest that there is an optimal thickness of the capping layer to get the best alignment and most uniform size distribution of stacked quantum dots, and that its variation can be used to control the formation of interesting structures.",
author = "Niu, {X. B.} and Lee, {Y. J.} and Russel Caflisch and C. Ratsch",
year = "2008",
month = "8",
day = "22",
doi = "10.1103/PhysRevLett.101.086103",
language = "English (US)",
volume = "101",
journal = "Physical Review Letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "8",

}

TY - JOUR

T1 - Optimal capping layer thickness for stacked quantum dots

AU - Niu, X. B.

AU - Lee, Y. J.

AU - Caflisch, Russel

AU - Ratsch, C.

PY - 2008/8/22

Y1 - 2008/8/22

N2 - We study the effect of strain on the vertical and lateral self-organization of nanoscale patterns and stacked quantum dots during epitaxial growth. The computational approach is based on the level set method in combination with an atomistic strain code. Strain changes the energetics of microscopic parameters during growth, and thus determines the nucleation sites and the growth of islands and dots. Our results show that strain can lead to vertical alignment as well as lateral organization. Moreover, our simulations suggest that there is an optimal thickness of the capping layer to get the best alignment and most uniform size distribution of stacked quantum dots, and that its variation can be used to control the formation of interesting structures.

AB - We study the effect of strain on the vertical and lateral self-organization of nanoscale patterns and stacked quantum dots during epitaxial growth. The computational approach is based on the level set method in combination with an atomistic strain code. Strain changes the energetics of microscopic parameters during growth, and thus determines the nucleation sites and the growth of islands and dots. Our results show that strain can lead to vertical alignment as well as lateral organization. Moreover, our simulations suggest that there is an optimal thickness of the capping layer to get the best alignment and most uniform size distribution of stacked quantum dots, and that its variation can be used to control the formation of interesting structures.

UR - http://www.scopus.com/inward/record.url?scp=50249141751&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=50249141751&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.101.086103

DO - 10.1103/PhysRevLett.101.086103

M3 - Article

VL - 101

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 8

M1 - 086103

ER -