On the interpretation of tunnelling into an amorphous semiconductor

E. L. Wolf

Research output: Contribution to journalArticle

Abstract

Several recent measurements of the tunnel conductance G(V) in metal-insulator-amorphous semiconductor film junctions have shown, at V = 0, the G(0) ∝ exp (-BT- 1 4) temperature dependence characteristic of the variable-range phonon-assisted tunnelling model of Mott. It is suggested, however, that observation of this temperature dependence for a bias V{right double angle bracket}kT e indicates failure to achieve tunnel injection and internal equilibrium in the amorphous film. At equilibrium in the low temperature case, effective electron-phonon coupling can lead to the proportionality G(V)∝ ∫ 0 eV ρ{variant}(E)dE where ρ{variant}(E) is the energy density of states, rather than to G(V) ∝ ρ{variant}(eV) as is commonly assumed.

Original languageEnglish (US)
Pages (from-to)213-217
Number of pages5
JournalThin Solid Films
Volume28
Issue number2
DOIs
StatePublished - 1975

Fingerprint

Amorphous semiconductors
amorphous semiconductors
tunnels
temperature dependence
Tunnels
MIS (semiconductors)
brackets
flux density
Amorphous films
injection
Temperature
Metals
electrons
Electrons

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

On the interpretation of tunnelling into an amorphous semiconductor. / Wolf, E. L.

In: Thin Solid Films, Vol. 28, No. 2, 1975, p. 213-217.

Research output: Contribution to journalArticle

Wolf, E. L. / On the interpretation of tunnelling into an amorphous semiconductor. In: Thin Solid Films. 1975 ; Vol. 28, No. 2. pp. 213-217.
@article{fe3b2de34ef64c22b328f90b4c260309,
title = "On the interpretation of tunnelling into an amorphous semiconductor",
abstract = "Several recent measurements of the tunnel conductance G(V) in metal-insulator-amorphous semiconductor film junctions have shown, at V = 0, the G(0) ∝ exp (-BT- 1 4) temperature dependence characteristic of the variable-range phonon-assisted tunnelling model of Mott. It is suggested, however, that observation of this temperature dependence for a bias V{right double angle bracket}kT e indicates failure to achieve tunnel injection and internal equilibrium in the amorphous film. At equilibrium in the low temperature case, effective electron-phonon coupling can lead to the proportionality G(V)∝ ∫ 0 eV ρ{variant}(E)dE where ρ{variant}(E) is the energy density of states, rather than to G(V) ∝ ρ{variant}(eV) as is commonly assumed.",
author = "Wolf, {E. L.}",
year = "1975",
doi = "10.1016/0040-6090(75)90111-X",
language = "English (US)",
volume = "28",
pages = "213--217",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "2",

}

TY - JOUR

T1 - On the interpretation of tunnelling into an amorphous semiconductor

AU - Wolf, E. L.

PY - 1975

Y1 - 1975

N2 - Several recent measurements of the tunnel conductance G(V) in metal-insulator-amorphous semiconductor film junctions have shown, at V = 0, the G(0) ∝ exp (-BT- 1 4) temperature dependence characteristic of the variable-range phonon-assisted tunnelling model of Mott. It is suggested, however, that observation of this temperature dependence for a bias V{right double angle bracket}kT e indicates failure to achieve tunnel injection and internal equilibrium in the amorphous film. At equilibrium in the low temperature case, effective electron-phonon coupling can lead to the proportionality G(V)∝ ∫ 0 eV ρ{variant}(E)dE where ρ{variant}(E) is the energy density of states, rather than to G(V) ∝ ρ{variant}(eV) as is commonly assumed.

AB - Several recent measurements of the tunnel conductance G(V) in metal-insulator-amorphous semiconductor film junctions have shown, at V = 0, the G(0) ∝ exp (-BT- 1 4) temperature dependence characteristic of the variable-range phonon-assisted tunnelling model of Mott. It is suggested, however, that observation of this temperature dependence for a bias V{right double angle bracket}kT e indicates failure to achieve tunnel injection and internal equilibrium in the amorphous film. At equilibrium in the low temperature case, effective electron-phonon coupling can lead to the proportionality G(V)∝ ∫ 0 eV ρ{variant}(E)dE where ρ{variant}(E) is the energy density of states, rather than to G(V) ∝ ρ{variant}(eV) as is commonly assumed.

UR - http://www.scopus.com/inward/record.url?scp=49549140088&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=49549140088&partnerID=8YFLogxK

U2 - 10.1016/0040-6090(75)90111-X

DO - 10.1016/0040-6090(75)90111-X

M3 - Article

VL - 28

SP - 213

EP - 217

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 2

ER -