NOVEL TECHNIQUE FOR PREPARATION OF TUNNEL JUNCTION BARRIERS USING ELECTROCHEMICAL ANODIZATION.

R. W. Simon, P. M. Chaikin, S. A. Wolf

    Research output: Contribution to journalConference article

    Abstract

    A novel method has been developed for preparing both Josephson and single particle tunnel junctions. This technique has been applied to Sn-Sn//xO//y-metal films where the tin oxide barrier is formed on the surface of a freshly evaporated Sn film by electrochemical anodization. By varying the anodization parameters, the junction resistances can be controlled over more than three orders of magnitude: i. e. , from less than 10** minus **4 ohm-cm**2 to 0. 1 ohm-cm**2. In each instance, high quality junctions with nearly ideal I-V characteristics and low leakage currents have been produced. Low resistance Josephson junctions have been fabricated whose critical currents scale with junction resistance and modulate with applied magnetic field in the familiar Fraunhofer-like diffraction pattern.

    Original languageEnglish (US)
    Pages (from-to)957-959
    Number of pages3
    JournalIEEE Transactions on Magnetics
    VolumeMAG-19
    Issue number3 Pt 2
    StatePublished - Jan 1 1982
    EventAppl Supercond Conf - Knoxville, TN, Belg
    Duration: Nov 30 1982Dec 3 1982

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    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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