Nano-Mechanical Probing of Threding Dislocation in Ge-on-Si Films

G. Dushaq, A. Nayfelr, Mahmoud Rasras

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    In this work, we present a direct growth mechanism of thin Ge-on-Si films at low temperature using RF-PECVD. Nonoindentation is used as depth sensing technique to reveal the film residual stress and threading dislocation density (TDD). The findings enabled us to grow a 700 nm Ge film directly on Si with TDD of ∼ 1. x10 6cm-2. In addition, the correlation between the nanomechanical response and the structural properties of the integrated Ge films is investigated. Results show no variation in the mechanical response of the films for 150nm and 165nm penetration depths. Moreover, the hardness data obtained at different depth exabits lower values compared to bulk Ge due to the residual stress in the film. This technique is promising for testing the mechanical reliability of Ge based nano-devices.

    Original languageEnglish (US)
    Title of host publication18th International Conference on Nanotechnology, NANO 2018
    PublisherIEEE Computer Society
    ISBN (Electronic)9781538653364
    DOIs
    StatePublished - Jan 24 2019
    Event18th International Conference on Nanotechnology, NANO 2018 - Cork, Ireland
    Duration: Jul 23 2018Jul 26 2018

    Publication series

    NameProceedings of the IEEE Conference on Nanotechnology
    Volume2018-July
    ISSN (Print)1944-9399
    ISSN (Electronic)1944-9380

    Conference

    Conference18th International Conference on Nanotechnology, NANO 2018
    CountryIreland
    CityCork
    Period7/23/187/26/18

    Fingerprint

    residual stress
    Residual stresses
    Plasma enhanced chemical vapor deposition
    Structural properties
    hardness
    penetration
    Hardness
    Testing
    Temperature

    ASJC Scopus subject areas

    • Bioengineering
    • Electrical and Electronic Engineering
    • Materials Chemistry
    • Condensed Matter Physics

    Cite this

    Dushaq, G., Nayfelr, A., & Rasras, M. (2019). Nano-Mechanical Probing of Threding Dislocation in Ge-on-Si Films. In 18th International Conference on Nanotechnology, NANO 2018 [8626343] (Proceedings of the IEEE Conference on Nanotechnology; Vol. 2018-July). IEEE Computer Society. https://doi.org/10.1109/NANO.2018.8626343

    Nano-Mechanical Probing of Threding Dislocation in Ge-on-Si Films. / Dushaq, G.; Nayfelr, A.; Rasras, Mahmoud.

    18th International Conference on Nanotechnology, NANO 2018. IEEE Computer Society, 2019. 8626343 (Proceedings of the IEEE Conference on Nanotechnology; Vol. 2018-July).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Dushaq, G, Nayfelr, A & Rasras, M 2019, Nano-Mechanical Probing of Threding Dislocation in Ge-on-Si Films. in 18th International Conference on Nanotechnology, NANO 2018., 8626343, Proceedings of the IEEE Conference on Nanotechnology, vol. 2018-July, IEEE Computer Society, 18th International Conference on Nanotechnology, NANO 2018, Cork, Ireland, 7/23/18. https://doi.org/10.1109/NANO.2018.8626343
    Dushaq G, Nayfelr A, Rasras M. Nano-Mechanical Probing of Threding Dislocation in Ge-on-Si Films. In 18th International Conference on Nanotechnology, NANO 2018. IEEE Computer Society. 2019. 8626343. (Proceedings of the IEEE Conference on Nanotechnology). https://doi.org/10.1109/NANO.2018.8626343
    Dushaq, G. ; Nayfelr, A. ; Rasras, Mahmoud. / Nano-Mechanical Probing of Threding Dislocation in Ge-on-Si Films. 18th International Conference on Nanotechnology, NANO 2018. IEEE Computer Society, 2019. (Proceedings of the IEEE Conference on Nanotechnology).
    @inproceedings{c5a6df8f2e1c4ffbacb4201267d249f3,
    title = "Nano-Mechanical Probing of Threding Dislocation in Ge-on-Si Films",
    abstract = "In this work, we present a direct growth mechanism of thin Ge-on-Si films at low temperature using RF-PECVD. Nonoindentation is used as depth sensing technique to reveal the film residual stress and threading dislocation density (TDD). The findings enabled us to grow a 700 nm Ge film directly on Si with TDD of ∼ 1. x10 6cm-2. In addition, the correlation between the nanomechanical response and the structural properties of the integrated Ge films is investigated. Results show no variation in the mechanical response of the films for 150nm and 165nm penetration depths. Moreover, the hardness data obtained at different depth exabits lower values compared to bulk Ge due to the residual stress in the film. This technique is promising for testing the mechanical reliability of Ge based nano-devices.",
    author = "G. Dushaq and A. Nayfelr and Mahmoud Rasras",
    year = "2019",
    month = "1",
    day = "24",
    doi = "10.1109/NANO.2018.8626343",
    language = "English (US)",
    series = "Proceedings of the IEEE Conference on Nanotechnology",
    publisher = "IEEE Computer Society",
    booktitle = "18th International Conference on Nanotechnology, NANO 2018",

    }

    TY - GEN

    T1 - Nano-Mechanical Probing of Threding Dislocation in Ge-on-Si Films

    AU - Dushaq, G.

    AU - Nayfelr, A.

    AU - Rasras, Mahmoud

    PY - 2019/1/24

    Y1 - 2019/1/24

    N2 - In this work, we present a direct growth mechanism of thin Ge-on-Si films at low temperature using RF-PECVD. Nonoindentation is used as depth sensing technique to reveal the film residual stress and threading dislocation density (TDD). The findings enabled us to grow a 700 nm Ge film directly on Si with TDD of ∼ 1. x10 6cm-2. In addition, the correlation between the nanomechanical response and the structural properties of the integrated Ge films is investigated. Results show no variation in the mechanical response of the films for 150nm and 165nm penetration depths. Moreover, the hardness data obtained at different depth exabits lower values compared to bulk Ge due to the residual stress in the film. This technique is promising for testing the mechanical reliability of Ge based nano-devices.

    AB - In this work, we present a direct growth mechanism of thin Ge-on-Si films at low temperature using RF-PECVD. Nonoindentation is used as depth sensing technique to reveal the film residual stress and threading dislocation density (TDD). The findings enabled us to grow a 700 nm Ge film directly on Si with TDD of ∼ 1. x10 6cm-2. In addition, the correlation between the nanomechanical response and the structural properties of the integrated Ge films is investigated. Results show no variation in the mechanical response of the films for 150nm and 165nm penetration depths. Moreover, the hardness data obtained at different depth exabits lower values compared to bulk Ge due to the residual stress in the film. This technique is promising for testing the mechanical reliability of Ge based nano-devices.

    UR - http://www.scopus.com/inward/record.url?scp=85062287857&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=85062287857&partnerID=8YFLogxK

    U2 - 10.1109/NANO.2018.8626343

    DO - 10.1109/NANO.2018.8626343

    M3 - Conference contribution

    T3 - Proceedings of the IEEE Conference on Nanotechnology

    BT - 18th International Conference on Nanotechnology, NANO 2018

    PB - IEEE Computer Society

    ER -