Multiscale modeling of epitaxial growth processes: Level sets and atomistic models

Russel Caflisch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Epitaxy is the growth of a thin film by attachment to an existing substrate in which the crystalline properties of the film are determined by those of the substrate. No single model is able to address the wide range of length and time scales involved in epitaxial growth, so that a wide range of different models and simulation methods have been developed. This talk reviews several of these models - molecular dynamics (MD), kinetic Monte Carlo (KMC), island dynamics and continuum equations - in the context of layered semiconductors applied to nanoscale devices. We describe a level set method for simulation of the island dynamics model, validation of the model by comparison to KMC results, and the inclusion of nucleation. This model uses both atomistic and continuum scaling, since it includes island boundaries that are of atomistic height, but describes these boundaries as smooth curves.

Original languageEnglish (US)
Title of host publicationECCOMAS 2004 - European Congress on Computational Methods in Applied Sciences and Engineering
StatePublished - 2004
EventEuropean Congress on Computational Methods in Applied Sciences and Engineering, ECCOMAS 2004 - Jyvaskyla, Finland
Duration: Jul 24 2004Jul 28 2004

Other

OtherEuropean Congress on Computational Methods in Applied Sciences and Engineering, ECCOMAS 2004
CountryFinland
CityJyvaskyla
Period7/24/047/28/04

Fingerprint

Epitaxial Growth
Multiscale Modeling
Growth Process
Epitaxial growth
Level Set
Kinetic Monte Carlo
Continuum
Substrate
Island Model
Kinetics
Model
Epitaxy
Model Validation
Level Set Method
Substrates
Nucleation
Molecular Dynamics
Length Scale
Simulation Methods
Range of data

Keywords

  • Epitaxy
  • Island dynamics
  • Kinetic Monte Carlo
  • Thin films

ASJC Scopus subject areas

  • Artificial Intelligence
  • Applied Mathematics

Cite this

Caflisch, R. (2004). Multiscale modeling of epitaxial growth processes: Level sets and atomistic models. In ECCOMAS 2004 - European Congress on Computational Methods in Applied Sciences and Engineering

Multiscale modeling of epitaxial growth processes : Level sets and atomistic models. / Caflisch, Russel.

ECCOMAS 2004 - European Congress on Computational Methods in Applied Sciences and Engineering. 2004.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Caflisch, R 2004, Multiscale modeling of epitaxial growth processes: Level sets and atomistic models. in ECCOMAS 2004 - European Congress on Computational Methods in Applied Sciences and Engineering. European Congress on Computational Methods in Applied Sciences and Engineering, ECCOMAS 2004, Jyvaskyla, Finland, 7/24/04.
Caflisch R. Multiscale modeling of epitaxial growth processes: Level sets and atomistic models. In ECCOMAS 2004 - European Congress on Computational Methods in Applied Sciences and Engineering. 2004
Caflisch, Russel. / Multiscale modeling of epitaxial growth processes : Level sets and atomistic models. ECCOMAS 2004 - European Congress on Computational Methods in Applied Sciences and Engineering. 2004.
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