MoS2 FET fabrication and modeling for large-scale flexible electronics

Lili Yu, Dina El-Damak, Sungjae Ha, Shaloo Rakheja, Xi Ling, Jing Kong, Dimitri Antoniadis, Anantha Chandrakasan, Tomas Palacios

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present a state-of-the-art fabrication technology and physics-based model for molybdenum disulfide (MoS2) field effect transistors (FETs) to realize large-scale circuits. Uniform and large area chemical vapor deposition (CVD) growth of monolayer MoS2 was achieved by using perylene-3,4,9, 10-tetracarboxylic acid tetrapotassium salt (PTAS) seeding. Then, a gate first process results in enhancement mode FETs and also reduces performance variation and enables better process control. In addition, a Verilog-A compact model precisely predicts the performance of the fabricated MoS2 FETs and eases the large-scale integrated design. By using this technology, a switched capacitor DC-DC converter is implemented, and the measurement of the converter shows good agreement with the simulations.

Original languageEnglish (US)
Title of host publication2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers
PublisherInstitute of Electrical and Electronics Engineers Inc.
PagesT144-T145
Volume2015-August
ISBN (Print)9784863485013
DOIs
StatePublished - Aug 25 2015
EventSymposium on VLSI Technology, VLSI Technology 2015 - Kyoto, Japan
Duration: Jun 16 2015Jun 18 2015

Other

OtherSymposium on VLSI Technology, VLSI Technology 2015
CountryJapan
CityKyoto
Period6/16/156/18/15

Fingerprint

Flexible electronics
Field effect transistors
Fabrication
Computer hardware description languages
DC-DC converters
Molybdenum
Process control
Chemical vapor deposition
Monolayers
Capacitors
Physics
Salts
Acids
Networks (circuits)

Keywords

  • 2D materials
  • flexible IC
  • large scale
  • MoS

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Yu, L., El-Damak, D., Ha, S., Rakheja, S., Ling, X., Kong, J., ... Palacios, T. (2015). MoS2 FET fabrication and modeling for large-scale flexible electronics. In 2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers (Vol. 2015-August, pp. T144-T145). [7223655] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSIT.2015.7223655

MoS2 FET fabrication and modeling for large-scale flexible electronics. / Yu, Lili; El-Damak, Dina; Ha, Sungjae; Rakheja, Shaloo; Ling, Xi; Kong, Jing; Antoniadis, Dimitri; Chandrakasan, Anantha; Palacios, Tomas.

2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers. Vol. 2015-August Institute of Electrical and Electronics Engineers Inc., 2015. p. T144-T145 7223655.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yu, L, El-Damak, D, Ha, S, Rakheja, S, Ling, X, Kong, J, Antoniadis, D, Chandrakasan, A & Palacios, T 2015, MoS2 FET fabrication and modeling for large-scale flexible electronics. in 2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers. vol. 2015-August, 7223655, Institute of Electrical and Electronics Engineers Inc., pp. T144-T145, Symposium on VLSI Technology, VLSI Technology 2015, Kyoto, Japan, 6/16/15. https://doi.org/10.1109/VLSIT.2015.7223655
Yu L, El-Damak D, Ha S, Rakheja S, Ling X, Kong J et al. MoS2 FET fabrication and modeling for large-scale flexible electronics. In 2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers. Vol. 2015-August. Institute of Electrical and Electronics Engineers Inc. 2015. p. T144-T145. 7223655 https://doi.org/10.1109/VLSIT.2015.7223655
Yu, Lili ; El-Damak, Dina ; Ha, Sungjae ; Rakheja, Shaloo ; Ling, Xi ; Kong, Jing ; Antoniadis, Dimitri ; Chandrakasan, Anantha ; Palacios, Tomas. / MoS2 FET fabrication and modeling for large-scale flexible electronics. 2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers. Vol. 2015-August Institute of Electrical and Electronics Engineers Inc., 2015. pp. T144-T145
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