Molecular dynamics simulation of low energy boron and arsenic implant into silicon

Keith M. Beardmore, David Cai, Niels Gronbech-Jensen

Research output: Contribution to conferencePaper

Abstract

We have studied the implantation of boron and arsenic ions into silicon by classical Molecular Dynamics simulation. Single ion implant into the dimer reconstructed Si{100}(2×1) surface has been examined at energies between 0.25 keV and 5.0 keV, at both normal incidence and at non-channeling incidence. By using a new model for electronic stopping, developed for semi-conductors and containing only one fitted parameter, we have been able to accurately calculate the depth profile of the implanted B and As atoms. The results of the calculations are compared to the predictions from a Binary Collision (BC) model for the dopant profile, and to experimental data. This allows us to examine the low energy limits on the validity of the BC approximation, with the aim of producing modifications to the BC model to extend its validity into the sub-keV regime.

Original languageEnglish (US)
Pages535-538
Number of pages4
StatePublished - Dec 1 1996
EventProceedings of the 1996 11th International Conference on Ion Implantation Technology - Austin, TX, USA
Duration: Jun 16 1996Jun 21 1996

Other

OtherProceedings of the 1996 11th International Conference on Ion Implantation Technology
CityAustin, TX, USA
Period6/16/966/21/96

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'Molecular dynamics simulation of low energy boron and arsenic implant into silicon'. Together they form a unique fingerprint.

  • Cite this

    Beardmore, K. M., Cai, D., & Gronbech-Jensen, N. (1996). Molecular dynamics simulation of low energy boron and arsenic implant into silicon. 535-538. Paper presented at Proceedings of the 1996 11th International Conference on Ion Implantation Technology, Austin, TX, USA, .