Modeling of the sheath and the energy distribution of ions bombarding rf-biased substrates in high density plasma reactors and comparison to experimental measurements

Erik A. Edelberg, Eray Aydil

Research output: Contribution to journalReview article

Abstract

In plasma etching and deposition processes, the energy distribution of ions incident onto the substrate strongly affects the surface reactions and the film deposition and etching rates. The magnitude and frequency of the rf-bias power applied to the substrate electrode determines the spatiotemporal variations of the sheath potentials and hence the energy distribution of the ions impinging upon the substrate. A self-consistent dynamic model of the sheath, capable of predicting ion energy distributions impinging on a rf-biased electrode, was developed. The model consists of equations describing the charge transport in the sheath coupled to an equivalent circuit model of the sheath to predict the spatiotemporal charge and potential distributions near the surface. Experimental measurements of the energy distributions of ions impinging on a rf-biased electrostatic chuck have also been made in a high density transformer coupled plasma reactor through Ar and Ne plasmas. The predicted ion energy distributions and sheath profiles are in very good agreement with the experimental measurements.

Original languageEnglish (US)
Pages (from-to)4799-4812
Number of pages14
JournalJournal of Applied Physics
Volume86
Issue number9
DOIs
StatePublished - Nov 1 1999

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sheaths
plasma density
energy distribution
reactors
ions
electrodes
plasma etching
equivalent circuits
transformers
dynamic models
charge distribution
surface reactions
etching
electrostatics
profiles

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

@article{e4e51c638d6c40c6b0e23510dde48f6e,
title = "Modeling of the sheath and the energy distribution of ions bombarding rf-biased substrates in high density plasma reactors and comparison to experimental measurements",
abstract = "In plasma etching and deposition processes, the energy distribution of ions incident onto the substrate strongly affects the surface reactions and the film deposition and etching rates. The magnitude and frequency of the rf-bias power applied to the substrate electrode determines the spatiotemporal variations of the sheath potentials and hence the energy distribution of the ions impinging upon the substrate. A self-consistent dynamic model of the sheath, capable of predicting ion energy distributions impinging on a rf-biased electrode, was developed. The model consists of equations describing the charge transport in the sheath coupled to an equivalent circuit model of the sheath to predict the spatiotemporal charge and potential distributions near the surface. Experimental measurements of the energy distributions of ions impinging on a rf-biased electrostatic chuck have also been made in a high density transformer coupled plasma reactor through Ar and Ne plasmas. The predicted ion energy distributions and sheath profiles are in very good agreement with the experimental measurements.",
author = "Edelberg, {Erik A.} and Eray Aydil",
year = "1999",
month = "11",
day = "1",
doi = "10.1063/1.371446",
language = "English (US)",
volume = "86",
pages = "4799--4812",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "9",

}

TY - JOUR

T1 - Modeling of the sheath and the energy distribution of ions bombarding rf-biased substrates in high density plasma reactors and comparison to experimental measurements

AU - Edelberg, Erik A.

AU - Aydil, Eray

PY - 1999/11/1

Y1 - 1999/11/1

N2 - In plasma etching and deposition processes, the energy distribution of ions incident onto the substrate strongly affects the surface reactions and the film deposition and etching rates. The magnitude and frequency of the rf-bias power applied to the substrate electrode determines the spatiotemporal variations of the sheath potentials and hence the energy distribution of the ions impinging upon the substrate. A self-consistent dynamic model of the sheath, capable of predicting ion energy distributions impinging on a rf-biased electrode, was developed. The model consists of equations describing the charge transport in the sheath coupled to an equivalent circuit model of the sheath to predict the spatiotemporal charge and potential distributions near the surface. Experimental measurements of the energy distributions of ions impinging on a rf-biased electrostatic chuck have also been made in a high density transformer coupled plasma reactor through Ar and Ne plasmas. The predicted ion energy distributions and sheath profiles are in very good agreement with the experimental measurements.

AB - In plasma etching and deposition processes, the energy distribution of ions incident onto the substrate strongly affects the surface reactions and the film deposition and etching rates. The magnitude and frequency of the rf-bias power applied to the substrate electrode determines the spatiotemporal variations of the sheath potentials and hence the energy distribution of the ions impinging upon the substrate. A self-consistent dynamic model of the sheath, capable of predicting ion energy distributions impinging on a rf-biased electrode, was developed. The model consists of equations describing the charge transport in the sheath coupled to an equivalent circuit model of the sheath to predict the spatiotemporal charge and potential distributions near the surface. Experimental measurements of the energy distributions of ions impinging on a rf-biased electrostatic chuck have also been made in a high density transformer coupled plasma reactor through Ar and Ne plasmas. The predicted ion energy distributions and sheath profiles are in very good agreement with the experimental measurements.

UR - http://www.scopus.com/inward/record.url?scp=0008284330&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0008284330&partnerID=8YFLogxK

U2 - 10.1063/1.371446

DO - 10.1063/1.371446

M3 - Review article

VL - 86

SP - 4799

EP - 4812

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 9

ER -