Modeling of Plasma Etching Reactors Including Wafer Heating Effects

Eray Aydil, Demetre J. Economou

Research output: Contribution to journalArticle

Abstract

A comprehensive mathematical model of chlorine etching of polysilicon in a single-wafer plasma reactor was developed from first principles. Wafer heat transport was included as an integral part of the analysis. The model provided the spatiotemporal variations of etchant concentration, wafer temperature, and etch rate. Under conditions of high etch rate and poor wafer cooling, etching was inherently transient. The polysilicon etch rate increased with time despite the fact that the atomic chlorine concentration decreased with time. This was due to wafer heating and the Arrhenius dependence of etch rate on temperature. Multichannel laser interferometry was developed to monitor the spatiotemporal variations of etch rate in real time. Measured etch rate transients compared favorably with model predictions. Results were sensitive to surface reaction parameters and to wafer back side cooling.

Original languageEnglish (US)
Pages (from-to)1471-1481
Number of pages11
JournalJournal of the Electrochemical Society
Volume140
Issue number5
DOIs
StatePublished - Jan 1 1993

Fingerprint

Plasma etching
Chlorine
plasma etching
Polysilicon
Etching
reactors
wafers
Cooling
Laser interferometry
Heating
heating
Surface reactions
Mathematical models
Plasmas
Temperature
chlorine
etching
cooling
laser interferometry
etchants

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Materials Chemistry
  • Electrochemistry

Cite this

Modeling of Plasma Etching Reactors Including Wafer Heating Effects. / Aydil, Eray; Economou, Demetre J.

In: Journal of the Electrochemical Society, Vol. 140, No. 5, 01.01.1993, p. 1471-1481.

Research output: Contribution to journalArticle

@article{ca54c5bb688442dc9461638121ede411,
title = "Modeling of Plasma Etching Reactors Including Wafer Heating Effects",
abstract = "A comprehensive mathematical model of chlorine etching of polysilicon in a single-wafer plasma reactor was developed from first principles. Wafer heat transport was included as an integral part of the analysis. The model provided the spatiotemporal variations of etchant concentration, wafer temperature, and etch rate. Under conditions of high etch rate and poor wafer cooling, etching was inherently transient. The polysilicon etch rate increased with time despite the fact that the atomic chlorine concentration decreased with time. This was due to wafer heating and the Arrhenius dependence of etch rate on temperature. Multichannel laser interferometry was developed to monitor the spatiotemporal variations of etch rate in real time. Measured etch rate transients compared favorably with model predictions. Results were sensitive to surface reaction parameters and to wafer back side cooling.",
author = "Eray Aydil and Economou, {Demetre J.}",
year = "1993",
month = "1",
day = "1",
doi = "10.1149/1.2221582",
language = "English (US)",
volume = "140",
pages = "1471--1481",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "5",

}

TY - JOUR

T1 - Modeling of Plasma Etching Reactors Including Wafer Heating Effects

AU - Aydil, Eray

AU - Economou, Demetre J.

PY - 1993/1/1

Y1 - 1993/1/1

N2 - A comprehensive mathematical model of chlorine etching of polysilicon in a single-wafer plasma reactor was developed from first principles. Wafer heat transport was included as an integral part of the analysis. The model provided the spatiotemporal variations of etchant concentration, wafer temperature, and etch rate. Under conditions of high etch rate and poor wafer cooling, etching was inherently transient. The polysilicon etch rate increased with time despite the fact that the atomic chlorine concentration decreased with time. This was due to wafer heating and the Arrhenius dependence of etch rate on temperature. Multichannel laser interferometry was developed to monitor the spatiotemporal variations of etch rate in real time. Measured etch rate transients compared favorably with model predictions. Results were sensitive to surface reaction parameters and to wafer back side cooling.

AB - A comprehensive mathematical model of chlorine etching of polysilicon in a single-wafer plasma reactor was developed from first principles. Wafer heat transport was included as an integral part of the analysis. The model provided the spatiotemporal variations of etchant concentration, wafer temperature, and etch rate. Under conditions of high etch rate and poor wafer cooling, etching was inherently transient. The polysilicon etch rate increased with time despite the fact that the atomic chlorine concentration decreased with time. This was due to wafer heating and the Arrhenius dependence of etch rate on temperature. Multichannel laser interferometry was developed to monitor the spatiotemporal variations of etch rate in real time. Measured etch rate transients compared favorably with model predictions. Results were sensitive to surface reaction parameters and to wafer back side cooling.

UR - http://www.scopus.com/inward/record.url?scp=0027594936&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027594936&partnerID=8YFLogxK

U2 - 10.1149/1.2221582

DO - 10.1149/1.2221582

M3 - Article

VL - 140

SP - 1471

EP - 1481

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 5

ER -