Modeling MOCVD growth of YBCO thin films

Tak Shing Lo, Robert V. Kohn

Research output: Contribution to journalConference article

Abstract

We develop a new approach to the modeling of thin film growth. Our model treats the adatom density on the surface of the film as an explicit unknown. This approach (1) clarifies the role of the "uphill current" associated with the Schwoebel barrier; (2) facilitates simple, physically natural coupling to the mechanism of deposition; and (3) permits discussion of multispecies effects. Our implementation focuses on spiral mode growth of YBCO thin films, with MOCVD (metallorganic chemical vapor deposition) as the deposition mechanism.

Original languageEnglish (US)
Pages (from-to)P6491-P6497
JournalMaterials Research Society Symposium - Proceedings
Volume648
StatePublished - Dec 1 2001
EventGrowth, Evolution and Properties of Surfaces, Thin Films and Self-Organized Strutures - Boston, MA, United States
Duration: Nov 27 2000Dec 1 2000

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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