Modeling and simulation for epitaxial growth with strain

Russel Caflisch, C. Connell, E. Luo, M. Gyure, G. Simms, D. Vvedensky

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Strain has significance for both the growth characteristics and material properties of thin epitaxial films. In this work, the method of lattice statics is applied to an epitaxial system with cubic symmetry, using linear elasticity. The energy density and force balance equations are written using a finite difference formalism that clearly shows their consistency with continuum elasticity. For simplicity, the atomic interactions are assumed to be maximally localized. For a layered material system with a material/vacuum interface and with surface steps, force balance equations are derived, and intrinsic surface stress at the material/vacuum interface is included by treating the atoms at the surface as belonging to a different material. By defining the strain relative to an appropriately chosen nonequilibrium lattice, as in the method of eigenstrains, analytic formulas in terms of microscopic parameters are found for the macroscopic monopole and dipole forces due to a step.

Original languageEnglish (US)
Title of host publication2003 Nanotechnology Conference and Trade Show - Nanotech 2003
EditorsM. Laudon, B. Romanowicz
Pages37-38
Number of pages2
Volume3
StatePublished - 2003
Event2003 Nanotechnology Conference and Trade Show - Nanotech 2003 - San Francisco, CA, United States
Duration: Feb 23 2003Feb 27 2003

Other

Other2003 Nanotechnology Conference and Trade Show - Nanotech 2003
CountryUnited States
CitySan Francisco, CA
Period2/23/032/27/03

Fingerprint

Epitaxial growth
Elasticity
Vacuum
Epitaxial films
Materials properties
Thin films
Atoms

Keywords

  • Epitaxial growth
  • Modeling and simulation
  • Strain

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Caflisch, R., Connell, C., Luo, E., Gyure, M., Simms, G., & Vvedensky, D. (2003). Modeling and simulation for epitaxial growth with strain. In M. Laudon, & B. Romanowicz (Eds.), 2003 Nanotechnology Conference and Trade Show - Nanotech 2003 (Vol. 3, pp. 37-38)

Modeling and simulation for epitaxial growth with strain. / Caflisch, Russel; Connell, C.; Luo, E.; Gyure, M.; Simms, G.; Vvedensky, D.

2003 Nanotechnology Conference and Trade Show - Nanotech 2003. ed. / M. Laudon; B. Romanowicz. Vol. 3 2003. p. 37-38.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Caflisch, R, Connell, C, Luo, E, Gyure, M, Simms, G & Vvedensky, D 2003, Modeling and simulation for epitaxial growth with strain. in M Laudon & B Romanowicz (eds), 2003 Nanotechnology Conference and Trade Show - Nanotech 2003. vol. 3, pp. 37-38, 2003 Nanotechnology Conference and Trade Show - Nanotech 2003, San Francisco, CA, United States, 2/23/03.
Caflisch R, Connell C, Luo E, Gyure M, Simms G, Vvedensky D. Modeling and simulation for epitaxial growth with strain. In Laudon M, Romanowicz B, editors, 2003 Nanotechnology Conference and Trade Show - Nanotech 2003. Vol. 3. 2003. p. 37-38
Caflisch, Russel ; Connell, C. ; Luo, E. ; Gyure, M. ; Simms, G. ; Vvedensky, D. / Modeling and simulation for epitaxial growth with strain. 2003 Nanotechnology Conference and Trade Show - Nanotech 2003. editor / M. Laudon ; B. Romanowicz. Vol. 3 2003. pp. 37-38
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