Abstract
Full-spectrum in situ optical emission spectroscopy (OES) has emerged as a promising technology for in-line sensor systems for plasma etching process control. In this paper, we present a novel empirical model-based approach for OES data filtering based on statistical principal component analysis and jump linear filtering. The modeling procedure is demonstrated on a commercial multilayer Al/TiN/SiO2 etch process. For this process, we show that the proposed model provides a succinct representation of the OES signals and is in excellent agreement with the experimental data.
| Original language | English (US) |
|---|---|
| Title of host publication | IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings |
| Editors | Anon |
| Publisher | IEEE |
| State | Published - 1997 |
| Event | Proceedings of the 1997 IEEE International Symposium on Semiconductor on Manufacturing Conference - San Francisco, CA, USA Duration: Oct 6 1997 → Oct 8 1997 |
Other
| Other | Proceedings of the 1997 IEEE International Symposium on Semiconductor on Manufacturing Conference |
|---|---|
| City | San Francisco, CA, USA |
| Period | 10/6/97 → 10/8/97 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Industrial and Manufacturing Engineering
Cite this
Modeling and filtering of optical emission spectroscopy data for plasma etching systems. / Rangan, Sundeep; Spanos, Costas; Poolla, Kameshwar.
IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings. ed. / Anon. IEEE, 1997.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Modeling and filtering of optical emission spectroscopy data for plasma etching systems
AU - Rangan, Sundeep
AU - Spanos, Costas
AU - Poolla, Kameshwar
PY - 1997
Y1 - 1997
N2 - Full-spectrum in situ optical emission spectroscopy (OES) has emerged as a promising technology for in-line sensor systems for plasma etching process control. In this paper, we present a novel empirical model-based approach for OES data filtering based on statistical principal component analysis and jump linear filtering. The modeling procedure is demonstrated on a commercial multilayer Al/TiN/SiO2 etch process. For this process, we show that the proposed model provides a succinct representation of the OES signals and is in excellent agreement with the experimental data.
AB - Full-spectrum in situ optical emission spectroscopy (OES) has emerged as a promising technology for in-line sensor systems for plasma etching process control. In this paper, we present a novel empirical model-based approach for OES data filtering based on statistical principal component analysis and jump linear filtering. The modeling procedure is demonstrated on a commercial multilayer Al/TiN/SiO2 etch process. For this process, we show that the proposed model provides a succinct representation of the OES signals and is in excellent agreement with the experimental data.
UR - http://www.scopus.com/inward/record.url?scp=0031386582&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0031386582&partnerID=8YFLogxK
M3 - Conference contribution
BT - IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings
A2 - Anon, null
PB - IEEE
ER -