Mobility enhancement of organic field-effect transistor based on guanine trap-neutralizing layer

Wei Shi, Yifan Zheng, Junsheng Yu, Andre Taylor, Howard E. Katz

Research output: Contribution to journalArticle

Abstract

We introduced a nucleic acid component guanine as a trap-neutralizing layer between silicon dioxide gate dielectric and a pentacene semiconducting layer to obtain increased field-effect mobility in organic field-effect transistors (OFETs). A tripling of the field-effect mobility, from 0.13 to 0.42 cm2/V s, was achieved by introducing a 2 nm guanine layer. By characterizing the surface morphology of pentacene films grown on guanine, we found that the effect of guanine layer on the topography of pentacene film was not responsible for the mobility enhancement of the OFETs. The increased field-effect mobility was mainly attributed to the hydrogen bonding capacity of otherwise unassociated guanine molecules, which enabled them to neutralize trapping sites on the silicon dioxide surface.

Original languageEnglish (US)
Article number143301
JournalApplied Physics Letters
Volume109
Issue number14
DOIs
StatePublished - Oct 3 2016

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guanines
field effect transistors
traps
augmentation
silicon dioxide
nucleic acids
topography
trapping
hydrogen
molecules

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Mobility enhancement of organic field-effect transistor based on guanine trap-neutralizing layer. / Shi, Wei; Zheng, Yifan; Yu, Junsheng; Taylor, Andre; Katz, Howard E.

In: Applied Physics Letters, Vol. 109, No. 14, 143301, 03.10.2016.

Research output: Contribution to journalArticle

Shi, Wei ; Zheng, Yifan ; Yu, Junsheng ; Taylor, Andre ; Katz, Howard E. / Mobility enhancement of organic field-effect transistor based on guanine trap-neutralizing layer. In: Applied Physics Letters. 2016 ; Vol. 109, No. 14.
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