Microscopic topography of heterocrystal interfaces

Brian K. Olmsted, Sylvie Ferlay, Pierre Dechambenoit, Mir Wais Hosseini, Michael Ward

Research output: Contribution to journalArticle

Abstract

Real-time in situ atomic force microscopy (AFM) of the (010) and (001) planes of isomorphous [1,4-bis(amidinium)benzene] 2M(CN) 6·8H 2O (M = Fe, Ru) crystals, known to exhibit growth of one of the metalate compounds on the other to produce "core - shroud" heterocrystals, reveals high-fidelity epitaxial growth during heterocrystal formation or roughened surfaces, depending on the crystal face and crystallization conditions. The roughened crystal surfaces that define the interface between heteroepitaxial layers under typical growth conditions are consistent with the interface structure observed by electron dispersive spectrometry, which indicated intermixing of the two materials throughout a 0.7 μm thick interfacial region, but could not distinguish between various possible mechanisms for the intermixing. The crystal topography and roughness under various conditions reveal that the intermixing zone observed during heterocrystal formation may be a consequence of a rough growth surface on the inner "core" crystal upon evaporation of solvent prior to immersion in the growth medium used for epitaxial crystallization of the second compound. These observations suggest that the roughness of the growth interface can be regulated using specific growth protocols that minimize the intermixing of the two compounds.

Original languageEnglish (US)
Pages (from-to)2841-2847
Number of pages7
JournalCrystal Growth and Design
Volume9
Issue number6
DOIs
StatePublished - Jun 3 2009

Fingerprint

Topography
topography
Crystals
Crystallization
crystals
Surface roughness
roughness
crystallization
shrouds
Benzene
Epitaxial growth
Spectrometry
Atomic force microscopy
crystal surfaces
Evaporation
submerging
benzene
evaporation
atomic force microscopy
Electrons

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Olmsted, B. K., Ferlay, S., Dechambenoit, P., Hosseini, M. W., & Ward, M. (2009). Microscopic topography of heterocrystal interfaces. Crystal Growth and Design, 9(6), 2841-2847. https://doi.org/10.1021/cg9001225

Microscopic topography of heterocrystal interfaces. / Olmsted, Brian K.; Ferlay, Sylvie; Dechambenoit, Pierre; Hosseini, Mir Wais; Ward, Michael.

In: Crystal Growth and Design, Vol. 9, No. 6, 03.06.2009, p. 2841-2847.

Research output: Contribution to journalArticle

Olmsted, BK, Ferlay, S, Dechambenoit, P, Hosseini, MW & Ward, M 2009, 'Microscopic topography of heterocrystal interfaces', Crystal Growth and Design, vol. 9, no. 6, pp. 2841-2847. https://doi.org/10.1021/cg9001225
Olmsted BK, Ferlay S, Dechambenoit P, Hosseini MW, Ward M. Microscopic topography of heterocrystal interfaces. Crystal Growth and Design. 2009 Jun 3;9(6):2841-2847. https://doi.org/10.1021/cg9001225
Olmsted, Brian K. ; Ferlay, Sylvie ; Dechambenoit, Pierre ; Hosseini, Mir Wais ; Ward, Michael. / Microscopic topography of heterocrystal interfaces. In: Crystal Growth and Design. 2009 ; Vol. 9, No. 6. pp. 2841-2847.
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