Metal-germanium-metal photodetector grown on silicon using low temperature RF-PECVD

Ghada Dushaq, Ammar Nayfeh, Mahmoud Rasras

    Research output: Contribution to journalArticle

    Abstract

    In this paper, germanium metal-semiconductor-metal photodetectors (MSM PDs) are fabricated on Si using a low-temperature two-step deposition technique by RF-PECVD. The photodetectors are optimized to effectively suppress the dark current through the insertion of n-type a-Si:H interlayer between the metal/Ge interface. Tuning the Schottky Barrier Height (SBH) by inserting different thickness of the interlayer is investigated. Results revealed that SBH for electrons and holes can effectively be enhanced by 0.3eV and 0.54eV, respectively. Furthermore, the dark-current (IDark) is suppressed significantly by more than four orders of magnitude. The measured IDark is ~76 nA for an applied reverse bias of 1.0 V. Additionally, the Ge MSMs structure exhibited a photo responsivity of 0.8A/W at that bias. The proposed low-temperature (<550°C) Ge-on-Si MSM PD demonstrates a great potential for high-performance Ge-based photodetectors in monolithically integrated CMOS platform.

    Original languageEnglish (US)
    Pages (from-to)32110-32119
    Number of pages10
    JournalOptics Express
    Volume25
    Issue number25
    DOIs
    StatePublished - Dec 11 2017

    Fingerprint

    photometers
    germanium
    silicon
    metals
    dark current
    interlayers
    MSM (semiconductors)
    insertion
    CMOS
    platforms
    tuning
    electrons

    ASJC Scopus subject areas

    • Atomic and Molecular Physics, and Optics

    Cite this

    Metal-germanium-metal photodetector grown on silicon using low temperature RF-PECVD. / Dushaq, Ghada; Nayfeh, Ammar; Rasras, Mahmoud.

    In: Optics Express, Vol. 25, No. 25, 11.12.2017, p. 32110-32119.

    Research output: Contribution to journalArticle

    Dushaq, Ghada ; Nayfeh, Ammar ; Rasras, Mahmoud. / Metal-germanium-metal photodetector grown on silicon using low temperature RF-PECVD. In: Optics Express. 2017 ; Vol. 25, No. 25. pp. 32110-32119.
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