Mechanism and energetics of dissociative adsorption of SiH3 on the hydrogen-terminated Si (0 0 1) -( 2×1 ) surface

Stephen P. Walch, Shyam Ramalingam, Eray Aydil, Dimitrios Maroudas

Research output: Contribution to journalArticle

Abstract

A comprehensive theoretical study is presented of the adsorption mechanism and energetics of the silyl (SiH3) radical on the Si(001)-(2×1) surface terminated by one monolayer of hydrogen atoms. SiH3 adsorbs on the surface dissociatively through an insertion reaction that involves breaking of the Si-Si surface dimer bond and subsequent transfer of an H atom from the radical to an atom of the broken dimer, thus leading to formation of two surface dihydride (SiH2) species. The structure and energies of the corresponding equilibrium and transition-state configurations are presented, as well as detailed energetics along the reaction pathway.

Original languageEnglish (US)
Pages (from-to)304-310
Number of pages7
JournalChemical Physics Letters
Volume329
Issue number3-4
DOIs
StatePublished - Oct 20 2000

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Hydrogen
Adsorption
adsorption
hydrogen
Dimers
Atoms
dimers
dihydrides
atoms
insertion
Monolayers
hydrogen atoms
configurations
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

Cite this

Mechanism and energetics of dissociative adsorption of SiH3 on the hydrogen-terminated Si (0 0 1) -( 2×1 ) surface. / Walch, Stephen P.; Ramalingam, Shyam; Aydil, Eray; Maroudas, Dimitrios.

In: Chemical Physics Letters, Vol. 329, No. 3-4, 20.10.2000, p. 304-310.

Research output: Contribution to journalArticle

Walch, Stephen P. ; Ramalingam, Shyam ; Aydil, Eray ; Maroudas, Dimitrios. / Mechanism and energetics of dissociative adsorption of SiH3 on the hydrogen-terminated Si (0 0 1) -( 2×1 ) surface. In: Chemical Physics Letters. 2000 ; Vol. 329, No. 3-4. pp. 304-310.
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