Abstract
The mechanical-compressive stress's effects during low-temperature annealing was investigated for the crystallization of SiGe alloys on plastic substrates. The partial crystallization of the film was observed to occur at a temperature of 180°C, under an equivalent compressive strain of 0.05%. Rutherford backscattering spectroscopy was used to compute the atomic percentage of Si in the SiGe alloy and it was found to be 35%. The results indicate that without the application of the compressive strain, crystallization can not be observed for either systems at the temperatures investigated.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 856-858 |
| Number of pages | 3 |
| Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
| Volume | 22 |
| Issue number | 3 |
| DOIs | |
| State | Published - May 2004 |
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ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Surfaces and Interfaces
- Physics and Astronomy (miscellaneous)
Cite this
Low-temperature stress-assisted germanium-induced crystallization of silicon-germanium alloys on flexible polyethylene terephtalate substrates. / Hekmatshoar, B.; Shahrjerdi, Davood; Mohajerzadeh, S.; Khakifirooz, A.; Robertson, M.; Tonita, A.; Bennett, J. C.
In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 22, No. 3, 05.2004, p. 856-858.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Low-temperature stress-assisted germanium-induced crystallization of silicon-germanium alloys on flexible polyethylene terephtalate substrates
AU - Hekmatshoar, B.
AU - Shahrjerdi, Davood
AU - Mohajerzadeh, S.
AU - Khakifirooz, A.
AU - Robertson, M.
AU - Tonita, A.
AU - Bennett, J. C.
PY - 2004/5
Y1 - 2004/5
N2 - The mechanical-compressive stress's effects during low-temperature annealing was investigated for the crystallization of SiGe alloys on plastic substrates. The partial crystallization of the film was observed to occur at a temperature of 180°C, under an equivalent compressive strain of 0.05%. Rutherford backscattering spectroscopy was used to compute the atomic percentage of Si in the SiGe alloy and it was found to be 35%. The results indicate that without the application of the compressive strain, crystallization can not be observed for either systems at the temperatures investigated.
AB - The mechanical-compressive stress's effects during low-temperature annealing was investigated for the crystallization of SiGe alloys on plastic substrates. The partial crystallization of the film was observed to occur at a temperature of 180°C, under an equivalent compressive strain of 0.05%. Rutherford backscattering spectroscopy was used to compute the atomic percentage of Si in the SiGe alloy and it was found to be 35%. The results indicate that without the application of the compressive strain, crystallization can not be observed for either systems at the temperatures investigated.
UR - http://www.scopus.com/inward/record.url?scp=3142529279&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=3142529279&partnerID=8YFLogxK
U2 - 10.1116/1.1705581
DO - 10.1116/1.1705581
M3 - Article
VL - 22
SP - 856
EP - 858
JO - Journal of Vacuum Science and Technology A
JF - Journal of Vacuum Science and Technology A
SN - 0734-2101
IS - 3
ER -