Low-temperature stress-assisted germanium-induced crystallization of silicon-germanium alloys on flexible polyethylene terephtalate substrates

B. Hekmatshoar, Davood Shahrjerdi, S. Mohajerzadeh, A. Khakifirooz, M. Robertson, A. Tonita, J. C. Bennett

Research output: Contribution to journalArticle

Abstract

The mechanical-compressive stress's effects during low-temperature annealing was investigated for the crystallization of SiGe alloys on plastic substrates. The partial crystallization of the film was observed to occur at a temperature of 180°C, under an equivalent compressive strain of 0.05%. Rutherford backscattering spectroscopy was used to compute the atomic percentage of Si in the SiGe alloy and it was found to be 35%. The results indicate that without the application of the compressive strain, crystallization can not be observed for either systems at the temperatures investigated.

Original languageEnglish (US)
Pages (from-to)856-858
Number of pages3
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume22
Issue number3
DOIs
StatePublished - May 2004

Fingerprint

germanium alloys
Germanium
silicon alloys
Polyethylene
Crystallization
Polyethylenes
polyethylenes
germanium
crystallization
Low temperature effects
Substrates
Rutherford backscattering spectroscopy
Compressive stress
Temperature
backscattering
plastics
Annealing
Plastics
annealing
temperature

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Low-temperature stress-assisted germanium-induced crystallization of silicon-germanium alloys on flexible polyethylene terephtalate substrates. / Hekmatshoar, B.; Shahrjerdi, Davood; Mohajerzadeh, S.; Khakifirooz, A.; Robertson, M.; Tonita, A.; Bennett, J. C.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 22, No. 3, 05.2004, p. 856-858.

Research output: Contribution to journalArticle

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