Low temperature plasma deposition of silicon nitride from silane and nitrogen plasmas

Bengi F. Hanyaloglu, Eray Aydil

Research output: Contribution to journalArticle

Abstract

The plasma enhanced chemical vapor deposition of silicon nitride films from SiH4 and N2 gases was investigated below 450 K in a helical resonator plasma reactor using in situ spectroscopic ellipsometry and in situ attenuated total reflection Fourier transform infrared spectroscopy. Silicon nitride growth proceeds through nitridation of a thin Si-rich region at the film surface and the effects of the externally controlled parameters, such as plasma power and pressure, on the film composition and structure can be understood in terms of this mechanism. The key factor that affects the film composition and structure is the active nitrogen (N*2) flux arriving at the surface which determines the nitridation rate of Si-Si bonds. Silicon nitride films deposited using low plasma power and high pressure, conditions that produce low N*2 flux, contains a relatively high concentration of H in the form of Si-H and a-Si inclusions. Increasing the power or decreasing the pressure results in higher N*2 flux and nitridation rate. The films deposited under such conditions have less SiH and a-Si incorporation but higher NHx (x= 1,2) which disrupts the interconnectedness of the nitride network resulting in films that contain voids. Film properties can be tailored and optimized between these two extremes by manipulating power and pressure.

Original languageEnglish (US)
Pages (from-to)2794-2803
Number of pages10
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume16
Issue number5
DOIs
StatePublished - Jan 1 1998

Fingerprint

Nitrogen plasma
Silanes
Plasma deposition
nitrogen plasma
cold plasmas
Silicon nitride
silicon nitrides
silanes
Nitridation
Temperature
Fluxes
Plasmas
Spectroscopic ellipsometry
silicon nitride
Plasma enhanced chemical vapor deposition
flux (rate)
Chemical analysis
Nitrides
ellipsometry
Fourier transform infrared spectroscopy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Low temperature plasma deposition of silicon nitride from silane and nitrogen plasmas. / Hanyaloglu, Bengi F.; Aydil, Eray.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 16, No. 5, 01.01.1998, p. 2794-2803.

Research output: Contribution to journalArticle

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