Low-temperature non-metal-induced crystallization of germanium for fabrication of thin-film transistors

Bahman Hekmatshoar, Arash Khajooeizadeh, Shams Mohajerzadeh, Davood Shahrjerdi, Ebrahim Asl-Soleimani

Research output: Contribution to journalArticle

Abstract

Device-quality poly-Ge layers were grown at temperatures as low as 200 °C by successive hydrogenation and annealing steps, with no need to any metal incorporation. Hydrogenation is performed in a PECVD apparatus with 150 W RF hydrogen plasma and annealing is carried out in the same system in N 2 ambient. As a result, grains of the order of 100 nm are formed in the Ge layer. It has been observed that hydrogenation at high temperatures may be destructive to the Ge layer. Successive hydrogenation and annealing at respective temperatures of ISO and 200 °C would result in a device-quality poly crystalline Ge layer which has been employed for fabrication of depletion-mode thin-film transistors. These TFTs show a field-effect mobility of 80cm 2/Vs for holes and an ON/OFF ratio of more than 10 3, indicating the feasibility of this technique for applications in large-area electronics.

Original languageEnglish (US)
Pages (from-to)419-422
Number of pages4
JournalMaterials Science in Semiconductor Processing
Volume7
Issue number4-6 SPEC. ISS.
DOIs
StatePublished - 2004

Fingerprint

Germanium
Thin film transistors
Crystallization
Hydrogenation
hydrogenation
germanium
transistors
crystallization
Fabrication
fabrication
Annealing
thin films
annealing
Temperature
hydrogen plasma
Plasma enhanced chemical vapor deposition
Hydrogen
depletion
Electronic equipment
Metals

Keywords

  • Hydrogenation
  • Low-temperature processing
  • Non-metal-induced crystallization
  • Poly-ge tfts

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Low-temperature non-metal-induced crystallization of germanium for fabrication of thin-film transistors. / Hekmatshoar, Bahman; Khajooeizadeh, Arash; Mohajerzadeh, Shams; Shahrjerdi, Davood; Asl-Soleimani, Ebrahim.

In: Materials Science in Semiconductor Processing, Vol. 7, No. 4-6 SPEC. ISS., 2004, p. 419-422.

Research output: Contribution to journalArticle

Hekmatshoar, Bahman ; Khajooeizadeh, Arash ; Mohajerzadeh, Shams ; Shahrjerdi, Davood ; Asl-Soleimani, Ebrahim. / Low-temperature non-metal-induced crystallization of germanium for fabrication of thin-film transistors. In: Materials Science in Semiconductor Processing. 2004 ; Vol. 7, No. 4-6 SPEC. ISS. pp. 419-422.
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