Low temperature fabrication of high mobility poly-Ge TFTs on plastic

Davood Shahrjerdi, B. Hekmatshoar, S. Mohajerzadeh, S. Darbari

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Fabrication of depletion-mode poly Ge TFTs with field-effect hole mobility of 120 cm2/V-s on flexible PET substrates is reported. The fabricated TFTs show an ON/OFF ratio of 4×l04. All of the fabrication steps have been done at temperatures as low as 130°C. A recently established stress-assisted copper-induced crystallization technique has been exploited to crystallize the amorphous Ge (a-Ge) layer. Mechanical compressive stress has been applied to the Ge layer by bending the flexible substrate inward. Proper patterning of the a-Ge layer before thermo-mechanical post-treatment alleviates the density of cracks induced in the Ge layer as the main repercussion of the interfacial stress.

Original languageEnglish (US)
Title of host publicationProceedings of the 15th International Conference on Microelectronics, ICM 2003
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages361-364
Number of pages4
Volume2003-January
ISBN (Print)9770520101
DOIs
StatePublished - 2003
Event15th International Conference on Microelectronics, ICM 2003 - Cairo, Egypt
Duration: Dec 9 2003Dec 11 2003

Other

Other15th International Conference on Microelectronics, ICM 2003
CountryEgypt
CityCairo
Period12/9/0312/11/03

Fingerprint

Plastics
Fabrication
Hole mobility
Substrates
Compressive stress
Crystallization
Cracks
Copper
Temperature

Keywords

  • Compressive stress
  • Crystallization
  • Displays
  • Driver circuits
  • Fabrication
  • Plastics
  • Positron emission tomography
  • Substrates
  • Temperature
  • Thin film transistors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Shahrjerdi, D., Hekmatshoar, B., Mohajerzadeh, S., & Darbari, S. (2003). Low temperature fabrication of high mobility poly-Ge TFTs on plastic. In Proceedings of the 15th International Conference on Microelectronics, ICM 2003 (Vol. 2003-January, pp. 361-364). [1287834] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICM.2003.237966

Low temperature fabrication of high mobility poly-Ge TFTs on plastic. / Shahrjerdi, Davood; Hekmatshoar, B.; Mohajerzadeh, S.; Darbari, S.

Proceedings of the 15th International Conference on Microelectronics, ICM 2003. Vol. 2003-January Institute of Electrical and Electronics Engineers Inc., 2003. p. 361-364 1287834.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Shahrjerdi, D, Hekmatshoar, B, Mohajerzadeh, S & Darbari, S 2003, Low temperature fabrication of high mobility poly-Ge TFTs on plastic. in Proceedings of the 15th International Conference on Microelectronics, ICM 2003. vol. 2003-January, 1287834, Institute of Electrical and Electronics Engineers Inc., pp. 361-364, 15th International Conference on Microelectronics, ICM 2003, Cairo, Egypt, 12/9/03. https://doi.org/10.1109/ICM.2003.237966
Shahrjerdi D, Hekmatshoar B, Mohajerzadeh S, Darbari S. Low temperature fabrication of high mobility poly-Ge TFTs on plastic. In Proceedings of the 15th International Conference on Microelectronics, ICM 2003. Vol. 2003-January. Institute of Electrical and Electronics Engineers Inc. 2003. p. 361-364. 1287834 https://doi.org/10.1109/ICM.2003.237966
Shahrjerdi, Davood ; Hekmatshoar, B. ; Mohajerzadeh, S. ; Darbari, S. / Low temperature fabrication of high mobility poly-Ge TFTs on plastic. Proceedings of the 15th International Conference on Microelectronics, ICM 2003. Vol. 2003-January Institute of Electrical and Electronics Engineers Inc., 2003. pp. 361-364
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