Low-temperature copper-induced lateral growth of polycrystalline germanium assisted by external compressive stress

Bahman Hekmatshoar, Shams Mohajerzadeh, Davood Shahrjerdi, Ali Afzali-Kusha, Michael D. Robertson, Aaryn Tonita

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Copper-induced lateral growth of polycrystalline germanium (poly-Ge) at temperatures as low as 150°C was enabled by the application of an external mechanical stress during the annealing step of sample processing. An equivalent compressive strain of 0.05% was externally applied at 150°C for 10 h to a deposited amorphous Ge layer and crystalline growth rates of 2.5 and 1.8 μm/h were observed in directions parallel and perpendicular to the stress axis, respectively. These results were confirmed by scanning electron microscope and transmission electron microscopy (TEM) analyses. In addition, TEM and x-ray diffraction analyses indicate that a fraction of poly-Ge annealed in the presence of applied compressive stress possessed a tetragonal structure with space-group P4 32 12. The presence of the tetragonal phase is hypothesized to be the primary mechanism responsible for the lateral growth of poly-Ge.

Original languageEnglish (US)
Article number044901
JournalJournal of Applied Physics
Issue number4
StatePublished - Feb 15 2005


ASJC Scopus subject areas

  • Physics and Astronomy(all)

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