Low Temperature Copper-induced Crystallization Technique for Germanium on Flexible PET, by Means of Mechanical Compressee Stress

B. Hekmatshoar, Davood Shahrjerdi, S. Mohajerzadeh, A. Khakifirooz, A. Akhavan, M. Robertson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Low temperature copper-induced crystallization of amorphous germanium (a-Ge) has been significantly enhanced by applying mechanical compressive stress during thermal post-treatment. Manipulation of this technique, alongside with proper patterning of the a-Ge layer before thermo-mechanical process, has led to growth of device-quality poly-Ge layer on flexible PET substrate at temperatures as low as 130°C. Flexibility of the substrate allows the efficient application of uniaxial compressive stress by bending the PET sheets inward. Effects of compressive stress and ultimate crystallization of the Ge layer has been verified by electrical sheet resistance and Hall mobility measurements, and analyzed by XRD, SEM, TEM and RAMAN spectroscopy.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsN. Fruehauf, B.E. Gnade, J. Jang
Pages183-188
Number of pages6
Volume769
StatePublished - 2003
EventFlexible Electronics - Materials and Device Technology - San Francisco, CA, United States
Duration: Apr 22 2003Apr 25 2003

Other

OtherFlexible Electronics - Materials and Device Technology
CountryUnited States
CitySan Francisco, CA
Period4/22/034/25/03

Fingerprint

Germanium
Crystallization
Compressive stress
Copper
Hall mobility
Sheet resistance
Substrates
Temperature
Spectroscopy
Transmission electron microscopy
Scanning electron microscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Hekmatshoar, B., Shahrjerdi, D., Mohajerzadeh, S., Khakifirooz, A., Akhavan, A., & Robertson, M. (2003). Low Temperature Copper-induced Crystallization Technique for Germanium on Flexible PET, by Means of Mechanical Compressee Stress. In N. Fruehauf, B. E. Gnade, & J. Jang (Eds.), Materials Research Society Symposium - Proceedings (Vol. 769, pp. 183-188)

Low Temperature Copper-induced Crystallization Technique for Germanium on Flexible PET, by Means of Mechanical Compressee Stress. / Hekmatshoar, B.; Shahrjerdi, Davood; Mohajerzadeh, S.; Khakifirooz, A.; Akhavan, A.; Robertson, M.

Materials Research Society Symposium - Proceedings. ed. / N. Fruehauf; B.E. Gnade; J. Jang. Vol. 769 2003. p. 183-188.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hekmatshoar, B, Shahrjerdi, D, Mohajerzadeh, S, Khakifirooz, A, Akhavan, A & Robertson, M 2003, Low Temperature Copper-induced Crystallization Technique for Germanium on Flexible PET, by Means of Mechanical Compressee Stress. in N Fruehauf, BE Gnade & J Jang (eds), Materials Research Society Symposium - Proceedings. vol. 769, pp. 183-188, Flexible Electronics - Materials and Device Technology, San Francisco, CA, United States, 4/22/03.
Hekmatshoar B, Shahrjerdi D, Mohajerzadeh S, Khakifirooz A, Akhavan A, Robertson M. Low Temperature Copper-induced Crystallization Technique for Germanium on Flexible PET, by Means of Mechanical Compressee Stress. In Fruehauf N, Gnade BE, Jang J, editors, Materials Research Society Symposium - Proceedings. Vol. 769. 2003. p. 183-188
Hekmatshoar, B. ; Shahrjerdi, Davood ; Mohajerzadeh, S. ; Khakifirooz, A. ; Akhavan, A. ; Robertson, M. / Low Temperature Copper-induced Crystallization Technique for Germanium on Flexible PET, by Means of Mechanical Compressee Stress. Materials Research Society Symposium - Proceedings. editor / N. Fruehauf ; B.E. Gnade ; J. Jang. Vol. 769 2003. pp. 183-188
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