Low-frequency noise in irradiated graphene FETs

Ting Wu, Abdullah Alharbi, Takashi Taniguchi, Kenji Watanabe, Davood Shahrjerdi

Research output: Contribution to journalArticle

Abstract

We present a quantitative analysis of the low-frequency noise in irradiated monolayer graphene. In this study, we repeatedly irradiate a back-gated graphene transistor with argon ions at 90 eV and measure its low-frequency noise and channel conductivity after each irradiation. Our results indicate that the noise amplitude decreases monotonically with the increasing density of vacancy defects. The combination of our low-frequency noise measurements and carrier transport studies reveals that the mobility fluctuation model can explain this observation and that the density of vacancy defects, the density of charged impurities, and the mean free path of charge carriers determine the noise amplitude.

Original languageEnglish (US)
Article number193502
JournalApplied Physics Letters
Volume113
Issue number19
DOIs
StatePublished - Nov 5 2018

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graphene
field effect transistors
low frequencies
defects
noise measurement
mean free path
quantitative analysis
charge carriers
transistors
argon
impurities
conductivity
irradiation
ions

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Low-frequency noise in irradiated graphene FETs. / Wu, Ting; Alharbi, Abdullah; Taniguchi, Takashi; Watanabe, Kenji; Shahrjerdi, Davood.

In: Applied Physics Letters, Vol. 113, No. 19, 193502, 05.11.2018.

Research output: Contribution to journalArticle

Wu, T, Alharbi, A, Taniguchi, T, Watanabe, K & Shahrjerdi, D 2018, 'Low-frequency noise in irradiated graphene FETs', Applied Physics Letters, vol. 113, no. 19, 193502. https://doi.org/10.1063/1.5051658
Wu, Ting ; Alharbi, Abdullah ; Taniguchi, Takashi ; Watanabe, Kenji ; Shahrjerdi, Davood. / Low-frequency noise in irradiated graphene FETs. In: Applied Physics Letters. 2018 ; Vol. 113, No. 19.
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