Low dielectric constant Parylene-F-like films for intermetal dielectric applications

Bengi Hanyaloglu, Atilla Aydinli, Michael Oye, Eray Aydil

Research output: Contribution to journalArticle

Abstract

We report on the dielectric properties and thermal stability of thin polymer films that are suitable candidates for replacing silicon dioxide as the intermetal dielectric material in integrated circuits. Parylene-F-like films, (-CF2-C6H4-CF2-)n, were produced by plasma deposition from a mixture of Ar and 1,4-bis(trifluoromethyl)benzene (CF3-C6H4-CF3) discharges and characterized using infrared absorption spectroscopy, spectroscopic ellipsometry, and capacitance measurements. The dielectric constant and the magnitude of the electronic and ionic contributions to the dielectric constant were determined through capacitance measurements and Kramers-Kronig analysis of the infrared absorption data. The film's dielectric constant ranges between 2 and 2.6 depending on the deposition conditions and the largest contribution to the dielectric constant is electronic. The films deposited at 300°C are stable above 400°C and further optimization could push this limit to as high as 500°C.

Original languageEnglish (US)
Pages (from-to)606-608
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number4
DOIs
StatePublished - Jan 25 1999

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permittivity
infrared absorption
capacitance
electronics
ellipsometry
integrated circuits
dielectric properties
absorption spectroscopy
thermal stability
infrared spectroscopy
benzene
silicon dioxide
optimization
polymers

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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Low dielectric constant Parylene-F-like films for intermetal dielectric applications. / Hanyaloglu, Bengi; Aydinli, Atilla; Oye, Michael; Aydil, Eray.

In: Applied Physics Letters, Vol. 74, No. 4, 25.01.1999, p. 606-608.

Research output: Contribution to journalArticle

Hanyaloglu, Bengi ; Aydinli, Atilla ; Oye, Michael ; Aydil, Eray. / Low dielectric constant Parylene-F-like films for intermetal dielectric applications. In: Applied Physics Letters. 1999 ; Vol. 74, No. 4. pp. 606-608.
@article{8aabf253b74e45daa4eeef25d2c097ee,
title = "Low dielectric constant Parylene-F-like films for intermetal dielectric applications",
abstract = "We report on the dielectric properties and thermal stability of thin polymer films that are suitable candidates for replacing silicon dioxide as the intermetal dielectric material in integrated circuits. Parylene-F-like films, (-CF2-C6H4-CF2-)n, were produced by plasma deposition from a mixture of Ar and 1,4-bis(trifluoromethyl)benzene (CF3-C6H4-CF3) discharges and characterized using infrared absorption spectroscopy, spectroscopic ellipsometry, and capacitance measurements. The dielectric constant and the magnitude of the electronic and ionic contributions to the dielectric constant were determined through capacitance measurements and Kramers-Kronig analysis of the infrared absorption data. The film's dielectric constant ranges between 2 and 2.6 depending on the deposition conditions and the largest contribution to the dielectric constant is electronic. The films deposited at 300°C are stable above 400°C and further optimization could push this limit to as high as 500°C.",
author = "Bengi Hanyaloglu and Atilla Aydinli and Michael Oye and Eray Aydil",
year = "1999",
month = "1",
day = "25",
doi = "10.1063/1.123160",
language = "English (US)",
volume = "74",
pages = "606--608",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "4",

}

TY - JOUR

T1 - Low dielectric constant Parylene-F-like films for intermetal dielectric applications

AU - Hanyaloglu, Bengi

AU - Aydinli, Atilla

AU - Oye, Michael

AU - Aydil, Eray

PY - 1999/1/25

Y1 - 1999/1/25

N2 - We report on the dielectric properties and thermal stability of thin polymer films that are suitable candidates for replacing silicon dioxide as the intermetal dielectric material in integrated circuits. Parylene-F-like films, (-CF2-C6H4-CF2-)n, were produced by plasma deposition from a mixture of Ar and 1,4-bis(trifluoromethyl)benzene (CF3-C6H4-CF3) discharges and characterized using infrared absorption spectroscopy, spectroscopic ellipsometry, and capacitance measurements. The dielectric constant and the magnitude of the electronic and ionic contributions to the dielectric constant were determined through capacitance measurements and Kramers-Kronig analysis of the infrared absorption data. The film's dielectric constant ranges between 2 and 2.6 depending on the deposition conditions and the largest contribution to the dielectric constant is electronic. The films deposited at 300°C are stable above 400°C and further optimization could push this limit to as high as 500°C.

AB - We report on the dielectric properties and thermal stability of thin polymer films that are suitable candidates for replacing silicon dioxide as the intermetal dielectric material in integrated circuits. Parylene-F-like films, (-CF2-C6H4-CF2-)n, were produced by plasma deposition from a mixture of Ar and 1,4-bis(trifluoromethyl)benzene (CF3-C6H4-CF3) discharges and characterized using infrared absorption spectroscopy, spectroscopic ellipsometry, and capacitance measurements. The dielectric constant and the magnitude of the electronic and ionic contributions to the dielectric constant were determined through capacitance measurements and Kramers-Kronig analysis of the infrared absorption data. The film's dielectric constant ranges between 2 and 2.6 depending on the deposition conditions and the largest contribution to the dielectric constant is electronic. The films deposited at 300°C are stable above 400°C and further optimization could push this limit to as high as 500°C.

UR - http://www.scopus.com/inward/record.url?scp=0009641899&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0009641899&partnerID=8YFLogxK

U2 - 10.1063/1.123160

DO - 10.1063/1.123160

M3 - Article

VL - 74

SP - 606

EP - 608

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 4

ER -