Long-term potentiation in the amygdala: A cellular mechanism of fear learning and memory

Torfi Sigurdsson, Valérie Doyère, Christopher K. Cain, Joseph Ledoux

Research output: Contribution to journalArticle

Abstract

Much of the research on long-term potentiation (LTP) is motivated by the question of whether changes in synaptic strength similar to LTP underlie learning and memory. Here we discuss findings from studies on fear conditioning, a form of associative learning whose neural circuitry is relatively well understood, that may be particularly suited for addressing this question. We first review the evidence suggesting that fear conditioning is mediated by changes in synaptic strength at sensory inputs to the lateral nucleus of the amygdala. We then discuss several outstanding questions that will be important for future research on the role of synaptic plasticity in fear learning. The results gained from these studies may shed light not only on fear conditioning, but may also help unravel more general cellular mechanisms of learning and memory.

Original languageEnglish (US)
Pages (from-to)215-227
Number of pages13
JournalNeuropharmacology
Volume52
Issue number1
DOIs
StatePublished - Jan 2007

Fingerprint

Long-Term Potentiation
Amygdala
Fear
Learning
Neuronal Plasticity
Research
Conditioning (Psychology)

Keywords

  • Amygdala
  • Fear conditioning
  • Learning
  • Long-term potentiation
  • Memory
  • Plasticity

ASJC Scopus subject areas

  • Cellular and Molecular Neuroscience
  • Drug Discovery
  • Pharmacology

Cite this

Long-term potentiation in the amygdala : A cellular mechanism of fear learning and memory. / Sigurdsson, Torfi; Doyère, Valérie; Cain, Christopher K.; Ledoux, Joseph.

In: Neuropharmacology, Vol. 52, No. 1, 01.2007, p. 215-227.

Research output: Contribution to journalArticle

Sigurdsson, Torfi ; Doyère, Valérie ; Cain, Christopher K. ; Ledoux, Joseph. / Long-term potentiation in the amygdala : A cellular mechanism of fear learning and memory. In: Neuropharmacology. 2007 ; Vol. 52, No. 1. pp. 215-227.
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