Localisation in impurity bands

L. Fleishman, D. L. Stein

    Research output: Contribution to journalArticle

    Abstract

    The criteria for localisation in a model that is suitable for non-interacting electrons in an impurity band is investigated. It is shown that the critical density of impurities nc is given by nca H13/=f(W) where aH is a measure of the range of the overlap integral between impurities, and W the diagonal disorder. The apparent discrepancy in the results of Debney and Economou and Antonio (1977) is shown to be model dependent. It is shown that an increase in W leads to an increase in nc as expected from the results of Fritzsche (1979). The case of nearest-neighbour off-diagonal disorder is one dimension is also treated.

    Original languageEnglish (US)
    Article number022
    Pages (from-to)4817-4823
    Number of pages7
    JournalJournal of Physics C: Solid State Physics
    Volume12
    Issue number22
    DOIs
    StatePublished - 1979

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    Impurities
    impurities
    disorders
    Electrons
    electrons

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

    Cite this

    Localisation in impurity bands. / Fleishman, L.; Stein, D. L.

    In: Journal of Physics C: Solid State Physics, Vol. 12, No. 22, 022, 1979, p. 4817-4823.

    Research output: Contribution to journalArticle

    Fleishman, L. ; Stein, D. L. / Localisation in impurity bands. In: Journal of Physics C: Solid State Physics. 1979 ; Vol. 12, No. 22. pp. 4817-4823.
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