Level-set methods for the simulation of epitaxial phenomena

Mark F. Gyure, Christian Ratsch, Barry Merriman, Russel E. Caflisch, Stanley Osher, Jennifer J. Zinck, Dimitri D. Vvedensky

Research output: Contribution to journalArticle

Abstract

We introduce a model for epitaxial phenomena based on the motion of island boundaries, which is described by the level-set method. Our model treats the growing film as a continuum in the lateral direction, but retains atomistic discreteness in the growth direction. An example of such an “island dynamics” model using the level-set method is presented and compared with the corresponding rate equation description. Extensions of our methodology to more general settings are then discussed.

Original languageEnglish (US)
Pages (from-to)R6927-R6930
JournalPhysical Review E - Statistical Physics, Plasmas, Fluids, and Related Interdisciplinary Topics
Volume58
Issue number6
DOIs
StatePublished - Jan 1 1998

    Fingerprint

ASJC Scopus subject areas

  • Statistical and Nonlinear Physics
  • Statistics and Probability
  • Condensed Matter Physics

Cite this

Gyure, M. F., Ratsch, C., Merriman, B., Caflisch, R. E., Osher, S., Zinck, J. J., & Vvedensky, D. D. (1998). Level-set methods for the simulation of epitaxial phenomena. Physical Review E - Statistical Physics, Plasmas, Fluids, and Related Interdisciplinary Topics, 58(6), R6927-R6930. https://doi.org/10.1103/PhysRevE.58.R6927