Lateral alloy segregation in thin heteroepitaxial films

J. M. Reich, X. B. Niu, Y. J. Lee, Russel Caflisch, C. Ratsch

Research output: Contribution to journalArticle

Abstract

Alloy segregation is believed to be an important factor in the growth of the wetting layer and subsequent formation of islands during heteroepitaxy. We report simulated annealing results that determine the lowest-energy configuration of a strained system. Our results indicate that in addition to vertical segregation, there is also an energetic driving force for lateral segregation and formation of subsurface features before island formation. We believe that these subsurface features play a crucial role in the nucleation of islands.

Original languageEnglish (US)
Article number073405
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume79
Issue number7
DOIs
StatePublished - Feb 13 2009

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Simulated annealing
Epitaxial growth
Wetting
Nucleation
thin films
simulated annealing
wetting
nucleation
configurations
energy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Lateral alloy segregation in thin heteroepitaxial films. / Reich, J. M.; Niu, X. B.; Lee, Y. J.; Caflisch, Russel; Ratsch, C.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 79, No. 7, 073405, 13.02.2009.

Research output: Contribution to journalArticle

Reich, J. M. ; Niu, X. B. ; Lee, Y. J. ; Caflisch, Russel ; Ratsch, C. / Lateral alloy segregation in thin heteroepitaxial films. In: Physical Review B - Condensed Matter and Materials Physics. 2009 ; Vol. 79, No. 7.
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