Ion mixing in Ag-films on Si-substrates induced by a high fluence 40Ar+ beam with a flux of 0.2 μA/cm2

N. M. Masoud, D. E. Arafah, K. H. Becker

Research output: Contribution to journalArticle

Abstract

Characteristics of ion mixing in thin Ag-films deposited onto Si-substrates were studied using the Rutherford backscattering (RBS) technique. The mixing was induced by a 400 keV 40Ar+ beam with a flux of 0.2 μA/cm2 and fluences of up to 4 × 1017 ions/cm2. The concentration of Ag and Si atoms and their distributions in depth within the mixed region were determined. The RBS data indicate a clear broadening of the interfacial edges of Ag and Si distributions caused by atomic intermixing of the interface for doses above 7 × 1016 ions/cm2. The size of the intermixed region increases with increasing Ar fluence. Experimental findings also indicated that radiation-enhanced diffusion had not been totally eliminated. The mixing efficiency and diffusivity of Si and Ag were determined. Theoretical models were used to describe the mixing process. A comparison of our data with theory revealed that Ag diffuses in Si according to a local 'thermal spike' model. The above results when compared with our earlier studies of the Ag/Si system at a flux of 0.6 μA/cm2 under otherwise similar conditions indicate that the mixing in this system is flux dependent.

Original languageEnglish (US)
Pages (from-to)64-72
Number of pages9
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume198
Issue number1-2
DOIs
StatePublished - Dec 2002

Fingerprint

fluence
Ions
Fluxes
Substrates
Rutherford backscattering spectroscopy
ions
backscattering
spikes
diffusivity
Radiation
dosage
Atoms
radiation
thin films
atoms

Keywords

  • Alloys
  • Diffusion and migration
  • Ion bombardment
  • Metallic films
  • Radiation damage
  • Surface defects
  • Surface diffusion
  • Surface thermodynamics

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

@article{4b04536fdcea43f585391cc470279903,
title = "Ion mixing in Ag-films on Si-substrates induced by a high fluence 40Ar+ beam with a flux of 0.2 μA/cm2",
abstract = "Characteristics of ion mixing in thin Ag-films deposited onto Si-substrates were studied using the Rutherford backscattering (RBS) technique. The mixing was induced by a 400 keV 40Ar+ beam with a flux of 0.2 μA/cm2 and fluences of up to 4 × 1017 ions/cm2. The concentration of Ag and Si atoms and their distributions in depth within the mixed region were determined. The RBS data indicate a clear broadening of the interfacial edges of Ag and Si distributions caused by atomic intermixing of the interface for doses above 7 × 1016 ions/cm2. The size of the intermixed region increases with increasing Ar fluence. Experimental findings also indicated that radiation-enhanced diffusion had not been totally eliminated. The mixing efficiency and diffusivity of Si and Ag were determined. Theoretical models were used to describe the mixing process. A comparison of our data with theory revealed that Ag diffuses in Si according to a local 'thermal spike' model. The above results when compared with our earlier studies of the Ag/Si system at a flux of 0.6 μA/cm2 under otherwise similar conditions indicate that the mixing in this system is flux dependent.",
keywords = "Alloys, Diffusion and migration, Ion bombardment, Metallic films, Radiation damage, Surface defects, Surface diffusion, Surface thermodynamics",
author = "Masoud, {N. M.} and Arafah, {D. E.} and Becker, {K. H.}",
year = "2002",
month = "12",
doi = "10.1016/S0168-583X(02)01515-X",
language = "English (US)",
volume = "198",
pages = "64--72",
journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",
issn = "0168-583X",
publisher = "Elsevier",
number = "1-2",

}

TY - JOUR

T1 - Ion mixing in Ag-films on Si-substrates induced by a high fluence 40Ar+ beam with a flux of 0.2 μA/cm2

AU - Masoud, N. M.

AU - Arafah, D. E.

AU - Becker, K. H.

PY - 2002/12

Y1 - 2002/12

N2 - Characteristics of ion mixing in thin Ag-films deposited onto Si-substrates were studied using the Rutherford backscattering (RBS) technique. The mixing was induced by a 400 keV 40Ar+ beam with a flux of 0.2 μA/cm2 and fluences of up to 4 × 1017 ions/cm2. The concentration of Ag and Si atoms and their distributions in depth within the mixed region were determined. The RBS data indicate a clear broadening of the interfacial edges of Ag and Si distributions caused by atomic intermixing of the interface for doses above 7 × 1016 ions/cm2. The size of the intermixed region increases with increasing Ar fluence. Experimental findings also indicated that radiation-enhanced diffusion had not been totally eliminated. The mixing efficiency and diffusivity of Si and Ag were determined. Theoretical models were used to describe the mixing process. A comparison of our data with theory revealed that Ag diffuses in Si according to a local 'thermal spike' model. The above results when compared with our earlier studies of the Ag/Si system at a flux of 0.6 μA/cm2 under otherwise similar conditions indicate that the mixing in this system is flux dependent.

AB - Characteristics of ion mixing in thin Ag-films deposited onto Si-substrates were studied using the Rutherford backscattering (RBS) technique. The mixing was induced by a 400 keV 40Ar+ beam with a flux of 0.2 μA/cm2 and fluences of up to 4 × 1017 ions/cm2. The concentration of Ag and Si atoms and their distributions in depth within the mixed region were determined. The RBS data indicate a clear broadening of the interfacial edges of Ag and Si distributions caused by atomic intermixing of the interface for doses above 7 × 1016 ions/cm2. The size of the intermixed region increases with increasing Ar fluence. Experimental findings also indicated that radiation-enhanced diffusion had not been totally eliminated. The mixing efficiency and diffusivity of Si and Ag were determined. Theoretical models were used to describe the mixing process. A comparison of our data with theory revealed that Ag diffuses in Si according to a local 'thermal spike' model. The above results when compared with our earlier studies of the Ag/Si system at a flux of 0.6 μA/cm2 under otherwise similar conditions indicate that the mixing in this system is flux dependent.

KW - Alloys

KW - Diffusion and migration

KW - Ion bombardment

KW - Metallic films

KW - Radiation damage

KW - Surface defects

KW - Surface diffusion

KW - Surface thermodynamics

UR - http://www.scopus.com/inward/record.url?scp=0036898033&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036898033&partnerID=8YFLogxK

U2 - 10.1016/S0168-583X(02)01515-X

DO - 10.1016/S0168-583X(02)01515-X

M3 - Article

AN - SCOPUS:0036898033

VL - 198

SP - 64

EP - 72

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

IS - 1-2

ER -