Intrinsic electronic transport properties of organic field-effect transitors based on single crystalline tetramethyltetraselenafulvalene

M. S. Nam, A. Ardavan, R. J. Cava, P. M. Chaikin

    Research output: Contribution to journalArticle


    The electronic transport properties of organic field-effect transistors (OFET), constructed on the highly anisotropic semiconductor, tetramethyltetraselenafulvalene (TMTSF), were discussed. The results show that transport properties are largely dominated by small polaron formation. An intrinsic hopping mechanism was found to govern the electronic transport in TMTSF OFETs. A maximum mobility of 0.2 cm 2/V s at room temperature was reported.

    Original languageEnglish (US)
    Pages (from-to)4782-4784
    Number of pages3
    JournalApplied Physics Letters
    Issue number23
    StatePublished - Dec 8 2003


    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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