Intrinsic electronic transport properties of organic field-effect transitors based on single crystalline tetramethyltetraselenafulvalene

M. S. Nam, A. Ardavan, R. J. Cava, P. M. Chaikin

    Research output: Contribution to journalArticle

    Abstract

    The electronic transport properties of organic field-effect transistors (OFET), constructed on the highly anisotropic semiconductor, tetramethyltetraselenafulvalene (TMTSF), were discussed. The results show that transport properties are largely dominated by small polaron formation. An intrinsic hopping mechanism was found to govern the electronic transport in TMTSF OFETs. A maximum mobility of 0.2 cm 2/V s at room temperature was reported.

    Original languageEnglish (US)
    Pages (from-to)4782-4784
    Number of pages3
    JournalApplied Physics Letters
    Volume83
    Issue number23
    DOIs
    StatePublished - Dec 8 2003

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    transport properties
    electronics
    field effect transistors
    room temperature

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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    Intrinsic electronic transport properties of organic field-effect transitors based on single crystalline tetramethyltetraselenafulvalene. / Nam, M. S.; Ardavan, A.; Cava, R. J.; Chaikin, P. M.

    In: Applied Physics Letters, Vol. 83, No. 23, 08.12.2003, p. 4782-4784.

    Research output: Contribution to journalArticle

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    AU - Chaikin, P. M.

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