Intra- versus intergranular low-field magnetoresistance of Sr2FeMoO6 thin films

H. Q. Yin, J. S. Zhou, J. P. Zhou, R. Dass, John McDevitt, John B. Goodenough

Research output: Contribution to journalArticle

Abstract

Thin films of (001)-oriented Sr2FeMoO6 have been epitaxially deposited on LaAlO3 and SrTiO3 (001) substrates. Comparison of their transport and magnetic properties with those of polycrystalline ceramic samples shows a metallic versus semiconductor temperature dependence and a saturation magnetization Ms at 10 K of 3.2 μB/f.u. in the film as against 3.0 for a tetragonal polycrystalline sample. However, the Curie temperature TC≈389 K is reduced from 415 K found for the tetragonal ceramic, which lowers Ms at 300 K in the thin films to 2.0 μB/f.u. compared to 2.2 μB/f.u. in the ceramics. A Wheatstone bridge arrangement straddling a bicrystal boundary has been used to verify that spin-dependent electron transfer through a grain boundary is responsible for the low-field magnetoresistance found in polycrystalline samples below TC.

Original languageEnglish (US)
Pages (from-to)2812-2814
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number18
StatePublished - Nov 1 1999

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ceramics
thin films
Wheatstone bridges
bicrystals
Curie temperature
electron transfer
grain boundaries
transport properties
magnetic properties
saturation
magnetization
temperature dependence

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Yin, H. Q., Zhou, J. S., Zhou, J. P., Dass, R., McDevitt, J., & Goodenough, J. B. (1999). Intra- versus intergranular low-field magnetoresistance of Sr2FeMoO6 thin films. Applied Physics Letters, 75(18), 2812-2814.

Intra- versus intergranular low-field magnetoresistance of Sr2FeMoO6 thin films. / Yin, H. Q.; Zhou, J. S.; Zhou, J. P.; Dass, R.; McDevitt, John; Goodenough, John B.

In: Applied Physics Letters, Vol. 75, No. 18, 01.11.1999, p. 2812-2814.

Research output: Contribution to journalArticle

Yin, HQ, Zhou, JS, Zhou, JP, Dass, R, McDevitt, J & Goodenough, JB 1999, 'Intra- versus intergranular low-field magnetoresistance of Sr2FeMoO6 thin films', Applied Physics Letters, vol. 75, no. 18, pp. 2812-2814.
Yin HQ, Zhou JS, Zhou JP, Dass R, McDevitt J, Goodenough JB. Intra- versus intergranular low-field magnetoresistance of Sr2FeMoO6 thin films. Applied Physics Letters. 1999 Nov 1;75(18):2812-2814.
Yin, H. Q. ; Zhou, J. S. ; Zhou, J. P. ; Dass, R. ; McDevitt, John ; Goodenough, John B. / Intra- versus intergranular low-field magnetoresistance of Sr2FeMoO6 thin films. In: Applied Physics Letters. 1999 ; Vol. 75, No. 18. pp. 2812-2814.
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