Intersubband relaxation time for InxGa1-xAs/AIAs quantum wells with large transition energy

G. Ghislotti, Elisa Riedo, D. Lelmini, M. Martinelli

Research output: Contribution to journal › Article

Abstract

Intersubband relaxation time for InλGa1-xAs/AIAs multiple quantum wells presenting a large transition energy (680 meV) is measured by means of pump and probe experiments. Differential transmission decays in about 10 ps. The possible influence of intrasubband relaxation and Γ-X coupling on intersubband decay is discussed.

Original languageEnglish (US)
Pages (from-to)3626-3628
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number23
DOIs
StatePublished - Dec 6 1999

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relaxation time
quantum wells
decay
pumps
energy
probes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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Intersubband relaxation time for InxGa1-xAs/AIAs quantum wells with large transition energy. / Ghislotti, G.; Riedo, Elisa; Lelmini, D.; Martinelli, M.

In: Applied Physics Letters, Vol. 75, No. 23, 06.12.1999, p. 3626-3628.

Research output: Contribution to journal › Article

Ghislotti, G, Riedo, E, Lelmini, D & Martinelli, M 1999, 'Intersubband relaxation time for InxGa1-xAs/AIAs quantum wells with large transition energy', Applied Physics Letters, vol. 75, no. 23, pp. 3626-3628. https://doi.org/10.1063/1.125409
Ghislotti G, Riedo E, Lelmini D, Martinelli M. Intersubband relaxation time for InxGa1-xAs/AIAs quantum wells with large transition energy. Applied Physics Letters. 1999 Dec 6;75(23):3626-3628. https://doi.org/10.1063/1.125409
Ghislotti, G. ; Riedo, Elisa ; Lelmini, D. ; Martinelli, M. / Intersubband relaxation time for InxGa1-xAs/AIAs quantum wells with large transition energy. In: Applied Physics Letters. 1999 ; Vol. 75, No. 23. pp. 3626-3628.
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