Inelastic electron tunneling spectroscopy of thin ZnO barrier films

T. F. Refai, E. L. Wolf

Research output: Contribution to journalArticle

Abstract

Study by inelastic electron tunneling spectroscopy of 30 Å ZnO layers grown by thermal oxidation of zinc to form Zn/ZnO/Pb and Al/Al2O3/ZnO/Pb tunnel junctions is reported. Second derivative (d2V/dI2) peaks reveal additional transverse optical and longitudinal optical phonons of energy 12.6 meV and 15.4 meV respectively in ZnO. The barrier height at the Zn-ZnO interface is found to be 0.4 eV, consistent with the usual n-type semiconductor picture of ZnO.

Original languageEnglish (US)
Pages (from-to)345-350
Number of pages6
JournalThin Solid Films
Volume99
Issue number4
DOIs
StatePublished - Jan 28 1983

Fingerprint

n-type semiconductors
Electron tunneling
Tunnel junctions
Phonons
electron tunneling
tunnel junctions
Zinc
phonons
zinc
Spectroscopy
Semiconductor materials
Derivatives
Oxidation
oxidation
spectroscopy
energy
Hot Temperature

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Inelastic electron tunneling spectroscopy of thin ZnO barrier films. / Refai, T. F.; Wolf, E. L.

In: Thin Solid Films, Vol. 99, No. 4, 28.01.1983, p. 345-350.

Research output: Contribution to journalArticle

Refai, T. F. ; Wolf, E. L. / Inelastic electron tunneling spectroscopy of thin ZnO barrier films. In: Thin Solid Films. 1983 ; Vol. 99, No. 4. pp. 345-350.
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