Incorporation of Cl into hydrogenated amorphous silicon without optical band gap widening

Akihiro Takano, Eray Aydil

Research output: Contribution to journalLetter

Abstract

Chlorine atoms were introduced into plasma deposited hydrogenated amorphous silicon films by adding HCl to SiH4 containing discharge. Bulk and surface infrared spectra, film thickness and optical band gap were examined by in situ multiple total internal reflection Fourier transform infrared spectroscopy and spectroscopic ellipsometry. The growing top surface was chlorinated effectively and chlorine was incorporated into the growing film by abstraction and replacement of surface H. Cl concentration in the film is increased at the expense of decreasing H concentration, resulting in films with little optical band gap widening as compared to a-Si:H in spite of containing over 1021 cm-3 chlorine atoms, a concentration that is comparable to that of hydrogen.

Original languageEnglish (US)
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume41
Issue number12 A
StatePublished - Dec 1 2002

Fingerprint

amorphous silicon
chlorine
silicon films
ellipsometry
atoms
film thickness
infrared spectra
infrared spectroscopy
hydrogen

Keywords

  • Hydrogen chloride
  • Hydrogenated amorphous silicon
  • Multiple total internal reflection Fourier transform infrared spectroscopy
  • Optical band gap
  • Plasma enhanced chemical vapor deposition

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Incorporation of Cl into hydrogenated amorphous silicon without optical band gap widening. / Takano, Akihiro; Aydil, Eray.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 41, No. 12 A, 01.12.2002.

Research output: Contribution to journalLetter

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AB - Chlorine atoms were introduced into plasma deposited hydrogenated amorphous silicon films by adding HCl to SiH4 containing discharge. Bulk and surface infrared spectra, film thickness and optical band gap were examined by in situ multiple total internal reflection Fourier transform infrared spectroscopy and spectroscopic ellipsometry. The growing top surface was chlorinated effectively and chlorine was incorporated into the growing film by abstraction and replacement of surface H. Cl concentration in the film is increased at the expense of decreasing H concentration, resulting in films with little optical band gap widening as compared to a-Si:H in spite of containing over 1021 cm-3 chlorine atoms, a concentration that is comparable to that of hydrogen.

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KW - Optical band gap

KW - Plasma enhanced chemical vapor deposition

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