In situ probing and atomistic simulation of a-Si:H plasma deposition

Eray Aydil, Dimitrios Maroudas, Denise C. Marra, W. M.M. Kessels, Sumit Agarwal, Shyam Ramalingam, Saravanapriyan Sriraman, M. C.M. Van de Sanden, Akihiro Takano

Research output: Contribution to journalArticle

Abstract

Hydrogenated amorphous silicon thin films deposited from SiH4 containing plasmas are used in solar cells and thin film transistors for flat panel displays. Understanding the fundamental microscopic surface processes that lead to Si deposition and H incorporation is important for controlling the film properties. An in situ method based on attenuated total internal reflection Fourier transform infrared (ATR-FTIR) spectroscopy was developed and used to determine the surface coverage of silicon mono-, di-, and tri-hydrides as a function of deposition temperature and ion bombardment flux. Key reactions that take place on the surface during deposition are hypothesized based on the evolution of the surface hydride composition as a function of temperature and ion flux. In conjunction with the experiments, the growth of a-Si:H on H-terminated Si(001)-(2×1) surfaces was simulated through molecular dynamics. The simulation results were compared with experimental measurements to validate the simulations and to provide supporting evidence for radical-surface interaction mechanisms hypothesized based on the infrared spectroscopy data. Experimental measurements of the surface silicon hydride coverage and atomistic simulations are used synergistically to elucidate elementary processes occurring on the surface during a-Si:H deposition.

Original languageEnglish (US)
Pages (from-to)A111-A1112
JournalMaterials Research Society Symposium - Proceedings
Volume664
StatePublished - Jan 1 2001

Fingerprint

Plasma deposition
hydrides
simulation
Hydrides
infrared spectroscopy
flat panel displays
Fluxes
Flat panel displays
silicon
thin films
Silicon
surface reactions
Thin film transistors
amorphous silicon
Ion bombardment
Amorphous silicon
Silanes
bombardment
ions
transistors

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Aydil, E., Maroudas, D., Marra, D. C., Kessels, W. M. M., Agarwal, S., Ramalingam, S., ... Takano, A. (2001). In situ probing and atomistic simulation of a-Si:H plasma deposition. Materials Research Society Symposium - Proceedings, 664, A111-A1112.

In situ probing and atomistic simulation of a-Si:H plasma deposition. / Aydil, Eray; Maroudas, Dimitrios; Marra, Denise C.; Kessels, W. M.M.; Agarwal, Sumit; Ramalingam, Shyam; Sriraman, Saravanapriyan; Van de Sanden, M. C.M.; Takano, Akihiro.

In: Materials Research Society Symposium - Proceedings, Vol. 664, 01.01.2001, p. A111-A1112.

Research output: Contribution to journalArticle

Aydil, E, Maroudas, D, Marra, DC, Kessels, WMM, Agarwal, S, Ramalingam, S, Sriraman, S, Van de Sanden, MCM & Takano, A 2001, 'In situ probing and atomistic simulation of a-Si:H plasma deposition', Materials Research Society Symposium - Proceedings, vol. 664, pp. A111-A1112.
Aydil E, Maroudas D, Marra DC, Kessels WMM, Agarwal S, Ramalingam S et al. In situ probing and atomistic simulation of a-Si:H plasma deposition. Materials Research Society Symposium - Proceedings. 2001 Jan 1;664:A111-A1112.
Aydil, Eray ; Maroudas, Dimitrios ; Marra, Denise C. ; Kessels, W. M.M. ; Agarwal, Sumit ; Ramalingam, Shyam ; Sriraman, Saravanapriyan ; Van de Sanden, M. C.M. ; Takano, Akihiro. / In situ probing and atomistic simulation of a-Si:H plasma deposition. In: Materials Research Society Symposium - Proceedings. 2001 ; Vol. 664. pp. A111-A1112.
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