In situ monitoring of etching uniformity in plasma reactors

Demetre Economou, Eray Aydil, Gabe Barna

Research output: Contribution to specialist publicationArticle

Abstract

A spatially resolved optical emission spectroscopy technique was applied to measure etchant concentration profiles in parallel plate plasma reactors. Also, multichannel laser interferometry was used to measure etching uniformity during plasma processing.

Original languageEnglish (US)
Pages107-111
Number of pages5
Volume34
No4
Specialist publicationSolid State Technology
StatePublished - Apr 1 1991

Fingerprint

Laser interferometry
Plasma applications
Optical emission spectroscopy
Etching
reactors
etching
Plasmas
laser interferometry
etchants
Monitoring
optical emission spectroscopy
parallel plates
profiles

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics

Cite this

In situ monitoring of etching uniformity in plasma reactors. / Economou, Demetre; Aydil, Eray; Barna, Gabe.

In: Solid State Technology, Vol. 34, No. 4, 01.04.1991, p. 107-111.

Research output: Contribution to specialist publicationArticle

Economou, D, Aydil, E & Barna, G 1991, 'In situ monitoring of etching uniformity in plasma reactors' Solid State Technology, vol. 34, no. 4, pp. 107-111.
Economou, Demetre ; Aydil, Eray ; Barna, Gabe. / In situ monitoring of etching uniformity in plasma reactors. In: Solid State Technology. 1991 ; Vol. 34, No. 4. pp. 107-111.
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