In situ monitoring of etching uniformity in plasma reactors

Demetre Economou, Eray S. Aydil, Gabe Barna

Research output: Contribution to specialist publicationArticle

Abstract

A spatially resolved optical emission spectroscopy technique was applied to measure etchant concentration profiles in parallel plate plasma reactors. Also, multichannel laser interferometry was used to measure etching uniformity during plasma processing.

Original languageEnglish (US)
Pages107-111
Number of pages5
Volume34
No4
Specialist publicationSolid State Technology
StatePublished - Apr 1 1991

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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