Improvement of light output in GaN-based power chip light-emitting diodes with a nano-rough surface by nanoimprint lithography

H. W. Huang, C. H. Lin, C. C. Yu, B. D. Lee, C. H. Chiu, C. F. Lai, H. C. Kuo, Kok-Ming Leung, T. C. Lu, S. C. Wang

    Research output: Contribution to journalArticle

    Abstract

    The enhancement of light extraction of gallium nitride (GaN)-based power chip (PC) light-emitting diodes (LEDs) with a p-GaN rough surface by nanoimprint lithography (NIL) is presented. At a driving current of 350 mA and a chip size of 1 mm × 1 mm, the light output power of the PC LEDs with a p-GaN rough surface (etching depth from 130 to 150 nm) showed an enhancement of 24% on wafer when compared with the same device without NIL. Current-voltage results indicated an ohmic contact by the increase in the contact area of the nano-roughened surface at 200 mA. This paper offers a promising potential for enhancing the output powers of commercial LEDs.

    Original languageEnglish (US)
    Article number045022
    JournalSemiconductor Science and Technology
    Volume23
    Issue number4
    DOIs
    StatePublished - Apr 1 2008

    Fingerprint

    Nanoimprint lithography
    Gallium nitride
    gallium nitrides
    Light emitting diodes
    light emitting diodes
    lithography
    chips
    output
    Ohmic contacts
    augmentation
    electric contacts
    Etching
    etching
    wafers
    Electric potential
    electric potential
    gallium nitride

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials
    • Materials Science(all)
    • Condensed Matter Physics

    Cite this

    Improvement of light output in GaN-based power chip light-emitting diodes with a nano-rough surface by nanoimprint lithography. / Huang, H. W.; Lin, C. H.; Yu, C. C.; Lee, B. D.; Chiu, C. H.; Lai, C. F.; Kuo, H. C.; Leung, Kok-Ming; Lu, T. C.; Wang, S. C.

    In: Semiconductor Science and Technology, Vol. 23, No. 4, 045022, 01.04.2008.

    Research output: Contribution to journalArticle

    Huang, H. W. ; Lin, C. H. ; Yu, C. C. ; Lee, B. D. ; Chiu, C. H. ; Lai, C. F. ; Kuo, H. C. ; Leung, Kok-Ming ; Lu, T. C. ; Wang, S. C. / Improvement of light output in GaN-based power chip light-emitting diodes with a nano-rough surface by nanoimprint lithography. In: Semiconductor Science and Technology. 2008 ; Vol. 23, No. 4.
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    abstract = "The enhancement of light extraction of gallium nitride (GaN)-based power chip (PC) light-emitting diodes (LEDs) with a p-GaN rough surface by nanoimprint lithography (NIL) is presented. At a driving current of 350 mA and a chip size of 1 mm × 1 mm, the light output power of the PC LEDs with a p-GaN rough surface (etching depth from 130 to 150 nm) showed an enhancement of 24{\%} on wafer when compared with the same device without NIL. Current-voltage results indicated an ohmic contact by the increase in the contact area of the nano-roughened surface at 200 mA. This paper offers a promising potential for enhancing the output powers of commercial LEDs.",
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    AU - Huang, H. W.

    AU - Lin, C. H.

    AU - Yu, C. C.

    AU - Lee, B. D.

    AU - Chiu, C. H.

    AU - Lai, C. F.

    AU - Kuo, H. C.

    AU - Leung, Kok-Ming

    AU - Lu, T. C.

    AU - Wang, S. C.

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    AB - The enhancement of light extraction of gallium nitride (GaN)-based power chip (PC) light-emitting diodes (LEDs) with a p-GaN rough surface by nanoimprint lithography (NIL) is presented. At a driving current of 350 mA and a chip size of 1 mm × 1 mm, the light output power of the PC LEDs with a p-GaN rough surface (etching depth from 130 to 150 nm) showed an enhancement of 24% on wafer when compared with the same device without NIL. Current-voltage results indicated an ohmic contact by the increase in the contact area of the nano-roughened surface at 200 mA. This paper offers a promising potential for enhancing the output powers of commercial LEDs.

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