Impact of N2O/NH3/N2 gas mixture on the interface quality of germanium MOS capacitors

G. Dushaq, Mahmoud Rasras, A. Nayfeh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, nitration of germanium surface using a mixture of N2O, NH3 and N2 is performed using RF-PECVD reactor. The electrical characteristics of Al/HfO2/GeON/p-Ge capacitors are investigated. Results show that the hysteresis of metal-oxide- semiconductor (MOS) capacitors with nitration-based passivation step is reduced to ∼150 mV, compared with ∼400mV of the untreated sample. The suppression of hysteresis is attributed to the reduction of electron traps and enhancement of dielectric/Ge interface quality. The improved interface quality of plasma-based nitration of Ge surface is a promising technique for high performance Ge MOSFET fabrication.

Original languageEnglish (US)
Title of host publicationSiGe, Ge, and Related Materials
Subtitle of host publicationMaterials, Processing, and Devices 7
PublisherElectrochemical Society Inc.
Pages661-666
Number of pages6
Volume75
Edition8
ISBN (Electronic)9781607685395
DOIs
StatePublished - Jan 1 2016
EventSymposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 - PRiME 2016/230th ECS Meeting - Honolulu, United States
Duration: Oct 2 2016Oct 7 2016

Other

OtherSymposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 - PRiME 2016/230th ECS Meeting
CountryUnited States
CityHonolulu
Period10/2/1610/7/16

Fingerprint

Nitration
Germanium
Gas mixtures
Capacitors
Hysteresis
Metals
Electron traps
Plasma enhanced chemical vapor deposition
Passivation
Plasmas
Fabrication
Oxide semiconductors

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Dushaq, G., Rasras, M., & Nayfeh, A. (2016). Impact of N2O/NH3/N2 gas mixture on the interface quality of germanium MOS capacitors. In SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 (8 ed., Vol. 75, pp. 661-666). Electrochemical Society Inc.. https://doi.org/10.1149/07508.0661ecst

Impact of N2O/NH3/N2 gas mixture on the interface quality of germanium MOS capacitors. / Dushaq, G.; Rasras, Mahmoud; Nayfeh, A.

SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7. Vol. 75 8. ed. Electrochemical Society Inc., 2016. p. 661-666.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Dushaq, G, Rasras, M & Nayfeh, A 2016, Impact of N2O/NH3/N2 gas mixture on the interface quality of germanium MOS capacitors. in SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7. 8 edn, vol. 75, Electrochemical Society Inc., pp. 661-666, Symposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 - PRiME 2016/230th ECS Meeting, Honolulu, United States, 10/2/16. https://doi.org/10.1149/07508.0661ecst
Dushaq G, Rasras M, Nayfeh A. Impact of N2O/NH3/N2 gas mixture on the interface quality of germanium MOS capacitors. In SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7. 8 ed. Vol. 75. Electrochemical Society Inc. 2016. p. 661-666 https://doi.org/10.1149/07508.0661ecst
Dushaq, G. ; Rasras, Mahmoud ; Nayfeh, A. / Impact of N2O/NH3/N2 gas mixture on the interface quality of germanium MOS capacitors. SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7. Vol. 75 8. ed. Electrochemical Society Inc., 2016. pp. 661-666
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