Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability

Ben Kaczer, Robin Degraeve, Mahmoud Rasras, Koen Van De Mieroop, Philippe J. Roussel, Guido Groeseneken

Research output: Contribution to journalArticle

Abstract

The influence of FET gate oxide breakdown on the performance of a ring oscillator circuit is studied using statistical tools, emission microscopy, and circuit analysis. It is demonstrated that many hard breakdowns can occur in this circuit without affecting its overall function. Time-to-breakdown data measured on individual FETs are shown to scale correctly to circuit level. SPICE simulations of the ring oscillator with the affected FET represented by an equivalent circuit confirm the measured influence of the breakdown on the circuit's frequency, the stand-by and the operating currents. It is concluded that if maintaining a digital circuit's logical functionality is the sufficient reliability criterion, a nonzero probability exists that the circuit will remain functional beyond the first gate oxide breakdown. Consequently, relaxation of the present reliability criterion in certain cases might be possible.

Original languageEnglish (US)
Pages (from-to)500-506
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume49
Issue number3
DOIs
StatePublished - Mar 1 2002

Fingerprint

digital electronics
Digital circuits
Oxides
field effect transistors
breakdown
Field effect transistors
oxides
Networks (circuits)
oscillators
SPICE
Electric network analysis
Equivalent circuits
rings
Microscopic examination
equivalent circuits
microscopy
simulation

Keywords

  • Circuit reliability
  • CMOS digital integrated circuits
  • CMOSFET oscillators
  • Dielectric breakdown

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability. / Kaczer, Ben; Degraeve, Robin; Rasras, Mahmoud; Van De Mieroop, Koen; Roussel, Philippe J.; Groeseneken, Guido.

In: IEEE Transactions on Electron Devices, Vol. 49, No. 3, 01.03.2002, p. 500-506.

Research output: Contribution to journalArticle

Kaczer, B, Degraeve, R, Rasras, M, Van De Mieroop, K, Roussel, PJ & Groeseneken, G 2002, 'Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability', IEEE Transactions on Electron Devices, vol. 49, no. 3, pp. 500-506. https://doi.org/10.1109/16.987122
Kaczer, Ben ; Degraeve, Robin ; Rasras, Mahmoud ; Van De Mieroop, Koen ; Roussel, Philippe J. ; Groeseneken, Guido. / Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability. In: IEEE Transactions on Electron Devices. 2002 ; Vol. 49, No. 3. pp. 500-506.
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