Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability

Ben Kaczer, Robin Degraeve, Mahmoud Rasras, Koen Van De Mieroop, Philippe J. Roussel, Guido Groeseneken

    Research output: Contribution to journalArticle

    Abstract

    The influence of FET gate oxide breakdown on the performance of a ring oscillator circuit is studied using statistical tools, emission microscopy, and circuit analysis. It is demonstrated that many hard breakdowns can occur in this circuit without affecting its overall function. Time-to-breakdown data measured on individual FETs are shown to scale correctly to circuit level. SPICE simulations of the ring oscillator with the affected FET represented by an equivalent circuit confirm the measured influence of the breakdown on the circuit's frequency, the stand-by and the operating currents. It is concluded that if maintaining a digital circuit's logical functionality is the sufficient reliability criterion, a nonzero probability exists that the circuit will remain functional beyond the first gate oxide breakdown. Consequently, relaxation of the present reliability criterion in certain cases might be possible.

    Original languageEnglish (US)
    Pages (from-to)500-506
    Number of pages7
    JournalIEEE Transactions on Electron Devices
    Volume49
    Issue number3
    DOIs
    StatePublished - Mar 1 2002

    Fingerprint

    digital electronics
    Digital circuits
    Oxides
    field effect transistors
    breakdown
    Field effect transistors
    oxides
    Networks (circuits)
    oscillators
    SPICE
    Electric network analysis
    Equivalent circuits
    rings
    Microscopic examination
    equivalent circuits
    microscopy
    simulation

    Keywords

    • Circuit reliability
    • CMOS digital integrated circuits
    • CMOSFET oscillators
    • Dielectric breakdown

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Physics and Astronomy (miscellaneous)

    Cite this

    Kaczer, B., Degraeve, R., Rasras, M., Van De Mieroop, K., Roussel, P. J., & Groeseneken, G. (2002). Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability. IEEE Transactions on Electron Devices, 49(3), 500-506. https://doi.org/10.1109/16.987122

    Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability. / Kaczer, Ben; Degraeve, Robin; Rasras, Mahmoud; Van De Mieroop, Koen; Roussel, Philippe J.; Groeseneken, Guido.

    In: IEEE Transactions on Electron Devices, Vol. 49, No. 3, 01.03.2002, p. 500-506.

    Research output: Contribution to journalArticle

    Kaczer, B, Degraeve, R, Rasras, M, Van De Mieroop, K, Roussel, PJ & Groeseneken, G 2002, 'Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability', IEEE Transactions on Electron Devices, vol. 49, no. 3, pp. 500-506. https://doi.org/10.1109/16.987122
    Kaczer B, Degraeve R, Rasras M, Van De Mieroop K, Roussel PJ, Groeseneken G. Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability. IEEE Transactions on Electron Devices. 2002 Mar 1;49(3):500-506. https://doi.org/10.1109/16.987122
    Kaczer, Ben ; Degraeve, Robin ; Rasras, Mahmoud ; Van De Mieroop, Koen ; Roussel, Philippe J. ; Groeseneken, Guido. / Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability. In: IEEE Transactions on Electron Devices. 2002 ; Vol. 49, No. 3. pp. 500-506.
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