Identification of selective oxidation of TiC/SiC composite with X-ray diffraction and Raman spectroscopy

Nicoleta Doriana Banu, Ionut Banu, Marios S. Katsiotis, Anjana Tharalekshmy, Samuel Stephen, Jamie Whelan, Gisha Elizabeth Luckachan, Radu Vladea, Saeed M. Alhassan

    Research output: Contribution to journalArticle

    Abstract

    Open cell 3D titanium carbide/silicon carbide (TiC/SiC) composite was oxidised to titanium oxide/silicon carbide (TiO2/SiC) following different temperature profiles in a thermal gravimetric analysis (TGA) instrument in continuous air-flow and static air (oven) environments. The TiC oxidation to anatase, starting at temperatures over 450°C, was confirmed by Raman spectroscopy and X-Ray diffraction (XRD). By increasing the temperature, the mass fraction of anatase diminished, while the mass fraction of rutile increased. SiC oxidation started at 650°C when a mixture of TiO2/SiO2/SiC could be observed by Raman, XRD and HRTEM.

    Original languageEnglish (US)
    Pages (from-to)1503-1511
    Number of pages9
    JournalChemical Papers
    Volume70
    Issue number11
    DOIs
    StatePublished - Nov 1 2016

    Fingerprint

    Titanium carbide
    Raman Spectrum Analysis
    Silicon carbide
    X-Ray Diffraction
    Raman spectroscopy
    X ray diffraction
    Oxidation
    Titanium dioxide
    Composite materials
    Temperature
    Gravimetric analysis
    Titanium oxides
    Air
    Ovens
    Hot Temperature
    titanium dioxide
    titanium carbide
    silicon carbide

    Keywords

    • anatase
    • Raman spectroscopy
    • rutile
    • selective oxidation
    • TiC/SiC composite
    • X-ray diffraction

    ASJC Scopus subject areas

    • Chemistry(all)
    • Biochemistry
    • Chemical Engineering(all)
    • Industrial and Manufacturing Engineering
    • Materials Chemistry

    Cite this

    Banu, N. D., Banu, I., Katsiotis, M. S., Tharalekshmy, A., Stephen, S., Whelan, J., ... Alhassan, S. M. (2016). Identification of selective oxidation of TiC/SiC composite with X-ray diffraction and Raman spectroscopy. Chemical Papers, 70(11), 1503-1511. https://doi.org/10.1515/chempap-2016-0084

    Identification of selective oxidation of TiC/SiC composite with X-ray diffraction and Raman spectroscopy. / Banu, Nicoleta Doriana; Banu, Ionut; Katsiotis, Marios S.; Tharalekshmy, Anjana; Stephen, Samuel; Whelan, Jamie; Luckachan, Gisha Elizabeth; Vladea, Radu; Alhassan, Saeed M.

    In: Chemical Papers, Vol. 70, No. 11, 01.11.2016, p. 1503-1511.

    Research output: Contribution to journalArticle

    Banu, ND, Banu, I, Katsiotis, MS, Tharalekshmy, A, Stephen, S, Whelan, J, Luckachan, GE, Vladea, R & Alhassan, SM 2016, 'Identification of selective oxidation of TiC/SiC composite with X-ray diffraction and Raman spectroscopy', Chemical Papers, vol. 70, no. 11, pp. 1503-1511. https://doi.org/10.1515/chempap-2016-0084
    Banu ND, Banu I, Katsiotis MS, Tharalekshmy A, Stephen S, Whelan J et al. Identification of selective oxidation of TiC/SiC composite with X-ray diffraction and Raman spectroscopy. Chemical Papers. 2016 Nov 1;70(11):1503-1511. https://doi.org/10.1515/chempap-2016-0084
    Banu, Nicoleta Doriana ; Banu, Ionut ; Katsiotis, Marios S. ; Tharalekshmy, Anjana ; Stephen, Samuel ; Whelan, Jamie ; Luckachan, Gisha Elizabeth ; Vladea, Radu ; Alhassan, Saeed M. / Identification of selective oxidation of TiC/SiC composite with X-ray diffraction and Raman spectroscopy. In: Chemical Papers. 2016 ; Vol. 70, No. 11. pp. 1503-1511.
    @article{29b9f46a27384d2cb3eb5b81db0956fa,
    title = "Identification of selective oxidation of TiC/SiC composite with X-ray diffraction and Raman spectroscopy",
    abstract = "Open cell 3D titanium carbide/silicon carbide (TiC/SiC) composite was oxidised to titanium oxide/silicon carbide (TiO2/SiC) following different temperature profiles in a thermal gravimetric analysis (TGA) instrument in continuous air-flow and static air (oven) environments. The TiC oxidation to anatase, starting at temperatures over 450°C, was confirmed by Raman spectroscopy and X-Ray diffraction (XRD). By increasing the temperature, the mass fraction of anatase diminished, while the mass fraction of rutile increased. SiC oxidation started at 650°C when a mixture of TiO2/SiO2/SiC could be observed by Raman, XRD and HRTEM.",
    keywords = "anatase, Raman spectroscopy, rutile, selective oxidation, TiC/SiC composite, X-ray diffraction",
    author = "Banu, {Nicoleta Doriana} and Ionut Banu and Katsiotis, {Marios S.} and Anjana Tharalekshmy and Samuel Stephen and Jamie Whelan and Luckachan, {Gisha Elizabeth} and Radu Vladea and Alhassan, {Saeed M.}",
    year = "2016",
    month = "11",
    day = "1",
    doi = "10.1515/chempap-2016-0084",
    language = "English (US)",
    volume = "70",
    pages = "1503--1511",
    journal = "Chemical Papers",
    issn = "0366-6352",
    publisher = "Versita",
    number = "11",

    }

    TY - JOUR

    T1 - Identification of selective oxidation of TiC/SiC composite with X-ray diffraction and Raman spectroscopy

    AU - Banu, Nicoleta Doriana

    AU - Banu, Ionut

    AU - Katsiotis, Marios S.

    AU - Tharalekshmy, Anjana

    AU - Stephen, Samuel

    AU - Whelan, Jamie

    AU - Luckachan, Gisha Elizabeth

    AU - Vladea, Radu

    AU - Alhassan, Saeed M.

    PY - 2016/11/1

    Y1 - 2016/11/1

    N2 - Open cell 3D titanium carbide/silicon carbide (TiC/SiC) composite was oxidised to titanium oxide/silicon carbide (TiO2/SiC) following different temperature profiles in a thermal gravimetric analysis (TGA) instrument in continuous air-flow and static air (oven) environments. The TiC oxidation to anatase, starting at temperatures over 450°C, was confirmed by Raman spectroscopy and X-Ray diffraction (XRD). By increasing the temperature, the mass fraction of anatase diminished, while the mass fraction of rutile increased. SiC oxidation started at 650°C when a mixture of TiO2/SiO2/SiC could be observed by Raman, XRD and HRTEM.

    AB - Open cell 3D titanium carbide/silicon carbide (TiC/SiC) composite was oxidised to titanium oxide/silicon carbide (TiO2/SiC) following different temperature profiles in a thermal gravimetric analysis (TGA) instrument in continuous air-flow and static air (oven) environments. The TiC oxidation to anatase, starting at temperatures over 450°C, was confirmed by Raman spectroscopy and X-Ray diffraction (XRD). By increasing the temperature, the mass fraction of anatase diminished, while the mass fraction of rutile increased. SiC oxidation started at 650°C when a mixture of TiO2/SiO2/SiC could be observed by Raman, XRD and HRTEM.

    KW - anatase

    KW - Raman spectroscopy

    KW - rutile

    KW - selective oxidation

    KW - TiC/SiC composite

    KW - X-ray diffraction

    UR - http://www.scopus.com/inward/record.url?scp=84983284297&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84983284297&partnerID=8YFLogxK

    U2 - 10.1515/chempap-2016-0084

    DO - 10.1515/chempap-2016-0084

    M3 - Article

    VL - 70

    SP - 1503

    EP - 1511

    JO - Chemical Papers

    JF - Chemical Papers

    SN - 0366-6352

    IS - 11

    ER -